EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
Parts packaging code | SOJ |
package instruction | SOJ, SOJ42,.44 |
Contacts | 42 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FAST PAGE WITH EDO |
Maximum access time | 50 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
I/O type | COMMON |
JESD-30 code | R-PDSO-J42 |
JESD-609 code | e0 |
length | 27.31 mm |
memory density | 16777216 bit |
Memory IC Type | EDO DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 42 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOJ |
Encapsulate equivalent code | SOJ42,.44 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Maximum seat height | 3.76 mm |
self refresh | YES |
Maximum standby current | 0.0002 A |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | J BEND |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |