IBM11D2325H-60T datasheet, PDF

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IBM11D2325H-60T: DescriptionEDO DRAM Module, 2MX32, 60ns, CMOS, SIMM-72; Categorystorage storage; File Size191KB，21 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM11D2325H-60T Overview

EDO DRAM Module, 2MX32, 60ns, CMOS, SIMM-72

IBM11D2325H-60T Parametric

Parameter Name	Attribute value
Maker	IBM
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	16
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	67108864 bit
Memory IC Type	EDO DRAM MODULE
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	72
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX32
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	25.4 mm
self refresh	NO
Maximum standby current	0.004 A
Maximum slew rate	0.36 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE

IBM11D2325H-60T Preview

IBM11D2325H2M x 3210/10, 5.0V, LC, Sn/PbMMDS45DSU-021023421. MMDS45DSU-021023421.

IBM11D2325H

2M x 32 DRAM Module

Features

• 72-Pin Single-In-Line Memory Module

• Performance:

-60

RAC

RAS Access Time

CAC

CAS Access Time

Access Time From Address

Cycle Time

HPC

EDO Mode Cycle Time

60ns

15ns

30ns

-6R

60ns

17ns

30ns

-70

70ns

20ns

35ns

•

104ns 104ns 124ns

25ns

30ns

• High Performance CMOS process

• Manufactured with 16Mb DRAMS (2M x 8)

Thin outline (.104”)

Single 5V

0.5V Power Supply

Low current consumption

All inputs & outputs are fully TTL & CMOS

compatible

Extended Data Out (EDO) access cycle

Refresh Modes: RAS-Only, CBR, and Hidden

Refresh

2098 refresh cycles distributed across 32ms

11/10 Addressing (Row/Column)

Optimized for use in byte-write, non-parity appli-

cations.

Tin/lead version only

DRAMs in TSOP package

Description

The IBM11D2325H is an 8MB 72-pin 4-byte single

in-line memory module (SIMM) manufactured using

EDO DRAMs. The module is organized as a 2Mx32

high speed memory array, and is configured as one

2Mx32 bank. The assembly is intended for use in

16, 32 and 64 bit applications. It is manufactured

with four 2Mx8 devices, each in a 400mil TSOP

package, and is compatible with applications that

support 11/10 (Row/Column) addressing.

The use of EDO DRAMs allows for a reduction in

Page Mode cycle time from 40ns (Fast Page) to

25ns (EDO, 60ns/6Rns sort). The use of TSOP

packages allows tight SIMM spacing (.3” on center).

Input loading is consistent with 4Mb-based assem-

blies due to the addition of discrete capacitors maxi-

mizing compatibility at the system-level.

The IBM 72-Pin SIMMs provide a high performance,

flexible 4-byte interface in a 4.25” long footprint.

Card Outline

36 37

75H1698

SA14-4337-01

Revised 6/96

Use is further subject to the provisions at the end of this document.

Page 1 of 21

IBM11D2325H

2M x 32 DRAM Module

Pin Description

RAS0, RAS2

Row Address Strobe

CAS0 - CAS3 Column Address Strobe

A0 - A10

DQ0-7, 9-16,

18-25, 27-34

PD1 - PD4

Read/write Input

Address Inputs

Data Input/output

Power (+5V)

Ground

No Connect

Presence Detects

Pinout

Pin#

Name

DQ0

DQ18

DQ1

DQ19

DQ2

DQ20

DQ3

DQ21

A10

DQ4

DQ22

DQ5

DQ23

DQ6

Pin#

Name

DQ24

DQ7

DQ25

RAS2

CAS0

CAS2

CAS3

CAS1

RAS0

Pin#

Name

DQ9

DQ27

DQ10

DQ28

DQ11

DQ29

DQ12

DQ30

DQ13

DQ31

DQ32

DQ14

DQ33

DQ15

DQ34

DQ16

PD1

PD2

PD3

PD4

1. DQ numbering is compatible with non-parity (x32) version.

Ordering Information

Part Number

IBM11D2325H-60

IBM11D2325H-6R

IBM11D2325H-70

IBM11D2325H-60T

IBM11D2325H-6RT

IBM11D2325H-70T

2M x 32

Organization

Speed

60ns

6Rns

70ns

60ns

6Rns

70ns

11/10

Sn/Pb

4.25” x 1” x .104”

Addr.

Leads

Dimensions

Notes

1, 2

1. 6Rns speed sort has t

CAC

of 17ns

2. DRAM package designator appended to speed portion of part number on assemblies beginning with DRAM die rev E.

Use is further subject to the provisions at the end of this document.

75H1698

SA14-4337-01

Revised 6/96

Page 2 of 21

IBM11D2325H

2M x 32 DRAM Module

Block Diagram

RAS0

RAS

RAS2

RAS

A0 - A10

CAS0

A0 - A10

CAS

CAS1

CAS

CAS2

CAS

CAS3

CAS

DQ0 - DQ7

DQ9 - DQ16

DQ18 - DQ25

DQ27 - DQ34

75H1698

SA14-4337-01

Revised 6/96

Use is further subject to the provisions at the end of this document.

Page 3 of 21

IBM11D2325H

2M x 32 DRAM Module

Truth Table

Function

Standby

Read

Early-Write

EDO Mode - Read:

1st Cycle

Subsequent Cycles

EDO Mode - Write:

1st Cycle

Subsequent Cycles

RAS-Only Refresh

CAS-Before-RAS Refresh

Read

Hidden Refresh

Write

L→H→L

Row

Col

Data In

RAS

H→L

L→H→L

CAS

H→X

H→L

Row

Address

Row

N/A

Row

N/A

Row

Column

Address

Col

N/A

Col

All DQ bits

High Impedance

Valid Data Out

Valid Data In

Valid Data Out

Valid Data In

High Impedance

Data Out

Presence Detect

2M x 32

-60 / 6R

PD1

PD2

PD3

PD4

NC= OPEN

ss =

GND

-70

Use is further subject to the provisions at the end of this document.

75H1698

SA14-4337-01

Revised 6/96

Page 4 of 21

IBM11D2325H

2M x 32 DRAM Module

Absolute Maximum Ratings

Symbol

OUT

OPR

STG

OUT

Parameter

Power Supply Voltage

Input Voltage

Output Voltage

Operating Temperature

Storage Temperature

Power Dissipation

Short Circuit Output Current

Rating

-1.0 to +7.0

-0.5 to min (V

+ 0.5, 7.0)

-0.5 to min (V

+ 0.5, 7.0)

0 to +70

-55 to +125

1.98

Units

°C

Notes

1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional

operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-

ods may affect reliability.

Recommended DC Operating Conditions

Symbol

Supply Voltage

Input High Voltage

Input Low Voltage

Parameter

= 0 to 70

Min

4.5

2.4

-0.5

Typ

5.0

—

Max

5.5

+ 0.5

0.8

Units

Notes

1, 2

1. All voltages referenced to V

2. V

may overshoot to V

+ 2.0V for pulse widths of

≤

4.0ns (or V

+ 1.0V for

≤

8.0ns). Additionally, V

may undershoot to -2.0V

for pulse widths

≤

4.0ns (or -1.0V for

≤

8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-

ence.

Capacitance

Symbol

I/O

= 0 to +70°C, V

= 5.0V

0.5V)

Parameter

2M x 32

Max

Units

Input Capacitance (A0-A10)

Input Capacitance (RAS)

Input Capacitance (CAS)

Input Capacitance (WE)

Output Capacitance (All DQ)

75H1698

SA14-4337-01

Revised 6/96

Use is further subject to the provisions at the end of this document.

Page 5 of 21

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IBM11D2325H-60T Related Products

	IBM11D2325H-60T	IBM11D2325H-60	IBM11D2325H-6R	IBM11D2325H-6RT	IBM11D2325H-70	IBM11D2325H-70T
Description	EDO DRAM Module, 2MX32, 60ns, CMOS, SIMM-72	EDO DRAM Module, 2MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 2MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 2MX32, 60ns, CMOS, SIMM-72	EDO DRAM Module, 2MX32, 70ns, CMOS, PSMA72	EDO DRAM Module, 2MX32, 70ns, CMOS, SIMM-72
Maker	IBM	IBM	IBM	IBM	IBM	IBM
package instruction	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	60 ns	60 ns	60 ns	60 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-N72	R-PSMA-N72	R-PSMA-N72	R-XSMA-N72	R-PSMA-N72	R-XSMA-N72
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	32	32	32	32	32	32
Number of terminals	72	72	72	72	72	72
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED
encapsulated code	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
Encapsulate equivalent code	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	2048	2048	2048	2048	2048
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm
self refresh	NO	NO	NO	NO	NO	NO
Maximum standby current	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A
Maximum slew rate	0.36 mA	0.36 mA	0.36 mA	0.36 mA	0.32 mA	0.32 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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