IXTA10P15T datasheet, PDF - EEWORLD Datasheet

IXTA10P15T: DescriptionPower Field-Effect Transistor, 10A I(D), 150V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size182KB，6 Pages; ManufacturerIXYS; Environmental Compliance

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Power Field-Effect Transistor, 10A I(D), 150V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	D2PAK
package instruction	TO-263AA, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	83 W
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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