2N5883 datasheet, PDF - EEWORLD Datasheet

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2N5883: DescriptionPower Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N5883 Overview

Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N5883 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1439170498
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	60 V
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON

2N5883 Related Products

	2N5883	2N6331	2N4903	2N6246	2N6247	2N4901
Description	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	compli	compli	unknown	compli	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	25 A	30 A	5 A	5 A	15 A	5 A
Collector-emitter maximum voltage	60 V	100 V	80 V	60 V	80 V	40 V
Minimum DC current gain (hFE)	20	6	20	20	20	20
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of terminals	2	2	2	2	2	2
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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