Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum collector current (IC) | 5 A |
Collector-emitter maximum voltage | 80 V |
Minimum DC current gain (hFE) | 20 |
JEDEC-95 code | TO-3 |
JESD-30 code | O-MBFM-P2 |
JESD-609 code | e0 |
Number of terminals | 2 |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Base Number Matches | 1 |
2N4903 | 2N6331 | 2N6246 | 2N6247 | 2N5883 | 2N4901 | |
---|---|---|---|---|---|---|
Description | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Reach Compliance Code | compli | compli | unknown | compli | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 5 A | 30 A | 5 A | 15 A | 25 A | 5 A |
Collector-emitter maximum voltage | 80 V | 100 V | 60 V | 80 V | 60 V | 40 V |
Minimum DC current gain (hFE) | 20 | 6 | 20 | 20 | 20 | 20 |
JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 |
JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |