DC4602-3 datasheet, PDF - EEWORLD Datasheet

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DC4602-3: DescriptionVariable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.3pF C(T), 20V, Gallium Arsenide, Hyperabrupt; CategoryDiscrete semiconductor diode; File Size173KB，7 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DC4602-3 Overview

Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.3pF C(T), 20V, Gallium Arsenide, Hyperabrupt

DC4602-3 Parametric

Parameter Name	Attribute value
Maker	Dynex
package instruction	O-XEMW-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	SCHOTTKY BARRIER
Minimum breakdown voltage	20 V
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Nominal diode capacitance	1.3 pF
Diode component materials	GALLIUM ARSENIDE
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
JESD-30 code	O-XEMW-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
minimum quality factor	1800
Maximum repetitive peak reverse voltage	20 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Varactor Diode Classification	HYPERABRUPT

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Description	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.3pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.4pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 2.2pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.86pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 3.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt	Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt,
package instruction	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	SCHOTTKY BARRIER	SCHOTTKY BARRIER	SCHOTTKY BARRIER	SCHOTTKY BARRIER	SCHOTTKY BARRIER	SCHOTTKY BARRIER	SCHOTTKY BARRIER
Minimum breakdown voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	10%	10%	10%	10%	10%	10%	10%
Nominal diode capacitance	1.3 pF	0.4 pF	2.2 pF	1 pF	0.86 pF	3.5 pF	1.5 pF
Diode component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND	VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
JESD-30 code	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2	O-XEMW-N2
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	1800	2600	1400	1600	2700	1200	1500
Maximum repetitive peak reverse voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END	END
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT
Base Number Matches	-	1	1	1	1	1	-

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