Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 2.2pF C(T), 20V, Gallium Arsenide, Hyperabrupt
| Parameter Name | Attribute value |
| package instruction | O-XEMW-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | SCHOTTKY BARRIER |
| Minimum breakdown voltage | 20 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Nominal diode capacitance | 2.2 pF |
| Diode component materials | GALLIUM ARSENIDE |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND |
| JESD-30 code | O-XEMW-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -55 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Certification status | Not Qualified |
| minimum quality factor | 1400 |
| Maximum repetitive peak reverse voltage | 20 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Varactor Diode Classification | HYPERABRUPT |
| Base Number Matches | 1 |
| DC4603-2 | DC4600-4 | DC4702-3 | DC4601-4 | DC4605-2 | DC4602-3 | DC4703-3 | |
|---|---|---|---|---|---|---|---|
| Description | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 2.2pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.4pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.86pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 3.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.3pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt, |
| package instruction | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER |
| Minimum breakdown voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 10% | 10% | 10% | 10% | 10% | 10% | 10% |
| Nominal diode capacitance | 2.2 pF | 0.4 pF | 1 pF | 0.86 pF | 3.5 pF | 1.3 pF | 1.5 pF |
| Diode component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND |
| JESD-30 code | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 1400 | 2600 | 1600 | 2700 | 1200 | 1800 | 1500 |
| Maximum repetitive peak reverse voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| surface mount | YES | YES | YES | YES | YES | YES | YES |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | END | END | END | END | END | END | END |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
