Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 3.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt
Parameter Name | Attribute value |
package instruction | O-XEMW-N2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | SCHOTTKY BARRIER |
Minimum breakdown voltage | 20 V |
Configuration | SINGLE |
Diode Capacitance Tolerance | 10% |
Nominal diode capacitance | 3.5 pF |
Diode component materials | GALLIUM ARSENIDE |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND |
JESD-30 code | O-XEMW-N2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 100 °C |
Minimum operating temperature | -55 °C |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | MICROWAVE |
Certification status | Not Qualified |
minimum quality factor | 1200 |
Maximum repetitive peak reverse voltage | 20 V |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | END |
Varactor Diode Classification | HYPERABRUPT |
Base Number Matches | 1 |
DC4605-2 | DC4600-4 | DC4603-2 | DC4702-3 | DC4601-4 | DC4602-3 | DC4703-3 | |
---|---|---|---|---|---|---|---|
Description | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 3.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.4pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 2.2pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 0.86pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.3pF C(T), 20V, Gallium Arsenide, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Millimeter Wave Band, 1.5pF C(T), 20V, Gallium Arsenide, Hyperabrupt, |
package instruction | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER | SCHOTTKY BARRIER |
Minimum breakdown voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode Capacitance Tolerance | 10% | 10% | 10% | 10% | 10% | 10% | 10% |
Nominal diode capacitance | 3.5 pF | 0.4 pF | 2.2 pF | 1 pF | 0.86 pF | 1.3 pF | 1.5 pF |
Diode component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
frequency band | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND | VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND |
JESD-30 code | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 | O-XEMW-N2 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C | 100 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
minimum quality factor | 1200 | 2600 | 1400 | 1600 | 2700 | 1800 | 1500 |
Maximum repetitive peak reverse voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
surface mount | YES | YES | YES | YES | YES | YES | YES |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | END | END | END | END | END | END | END |
Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - |