ES1G datasheet, PDF - EEWORLD Datasheet

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ES1G: Description1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size156KB，3 Pages; ManufacturerYenyo Technology Co., Ltd.; Websitehttp://www.yenyo.com.tw/

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ES1G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

ES1G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, HSMA, 2 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0600 us
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	1 A

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YENYO

Surface Mount Efficient Fast Recovery Rectifier

Voltage Range 50 to 600 V

Current 1.0 Ampere

SMA/DO-214AC

ES1A THRU ES1J

Features



Fast switching for high efficiency



Low forward voltage drop



High current capability



Low reverse leakage current



High surge current capability



Glass passivated chip

Mechanical Data



Case: Molded plastic SMA/DO-214AC



Epoxy: UL 94V-0 rate flame retardant



Terminals: Solderable per MIL-STD-750

method 2026



Polarity:Color band denotes cathode



Mounting position: Any



Weight: 0.064 gram

.055(1.40)

.062(1.60)

.098(2.50)

.114(2.90)

.157(4.00)

.181(4.60)

.006(.152)

.012(.305)

.078(2.00)

.096(2.44)

.002(.051)

.008(.203)

.188(4.80)

.208(5.28)

.030(0.76)

.060(1.52)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

CHARACTERISTIC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current T

=55

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

Maximum Instantaneous Forward Voltage

@ 1.0 A

Maximum DC Reverse Current @T

=25

At Rated DC Blocking Voltage @T

=125

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Junction and Storage

Temperature Range

SYMBOL

RRM

RMS

(AV)

ES1A

ES1B

100

ES1D

200

140

200

1.0

ES1G

400

280

400

ES1J

600

420

600

UNIT

FSM

Trr

, T

STG

0.92

5.0

100

-55 to +150

1.3

1.5

NOTES : (1) Reverse recovery test conditions I

= 0.5A, I

= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to ambient.

1/2

R1, JUL-11

ES1G Related Products

	ES1G	ES1A	ES1D	ES1J	ES1B
Description	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	2	2	2	2
Number of components	1	1	1	1	1
Processing package description	Plastic, HSMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN
state	DISCONTINUED	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single	single
Diode component materials	silicon	silicon	silicon	silicon	silicon
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	0.0600 us	0.0200 us	0.0200 us	0.0600 us	0.0350 us
Maximum repetitive peak reverse voltage	400 V	50 V	200 V	600 V	100 V
Maximum average forward current	1 A	1 A	1 A	1 A	1 A
terminal coating	tin lead	-	PURE Tin	NOT SPECIFIED	PURE Tin

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