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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
PACKAGE DRAWING (Unit : mm)
4.5±0.1
1.6±0.2
2
4.0±0.25
2.5±0.1
1.5±0.1
Electrode
Connection
1.Souce
2.Drain
3.Gate
FEATURES
•
Can be driven by a 5V power source.
•
Low On-state resistance :
R
DS(on)1
= 220 mΩ MAX. (V
GS
= 4 V, I
D
= 1.5 A)
R
DS(on)2
= 150 mΩ MAX. (V
GS
= 10 V, I
D
= 2.5 A)
0.8MIN
.
1
0.42
±0.06
3
0.47
0.42
±0.06
1.5
±0.06
3.0
0.41
+0.03
-0.05
Marking : NX
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
60
±20
±4
±16
2
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Internal
Diode
Gate
Protection
Diode
Source
Notes1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic board of 16 cm
×
0.7 mm
2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
The mark
•
shows major revised points.
©
1998,1999
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