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H114E

Description
Rectifier Diode, 1 Element, 1A, 500V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size49KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

H114E Overview

Rectifier Diode, 1 Element, 1A, 500V V(RRM), Silicon

H114E Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH SPEED SWITCH
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.15 V
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage500 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

H114E Related Products

H114E H114F
Description Rectifier Diode, 1 Element, 1A, 500V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon
Maker Hitachi (Renesas ) Hitachi (Renesas )
package instruction E-LALF-W2 E-LALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features HIGH SPEED SWITCH HIGH SPEED SWITCH
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.15 V 1.15 V
JESD-30 code E-LALF-W2 E-LALF-W2
Maximum non-repetitive peak forward current 40 A 40 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 1 A 1 A
Package body material GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 500 V 600 V
Maximum reverse recovery time 0.2 µs 0.2 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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