2N5642 datasheet, PDF - EEWORLD Datasheet

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2N5642: DescriptionRF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size57KB，1 Pages; ManufacturerSolitron Devices Inc.

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2N5642 Overview

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN

2N5642 Parametric

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-CRPM-F4
Contacts	4
Reach Compliance Code	unknow
Maximum collector current (IC)	3 A
Collector-based maximum capacity	35 pF
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JESD-30 code	O-CRPM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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rf power

transistors

114

SILICON NPN/RF

TYPE

NUMBERS

2N2876

2N3375

2N3553

2N3632

2N3733

2N3866

2N3924

2N3926

2N3927

2N4012

2N4040

2N4041

2N4127

2N4128

2N4427

2N4428

2N4429

2N4430

2N4431

2N4440

2N4933

2N5016

2N5070

2N5071

2N5090

2N5102

2N5108

2N5109

2N5421

2N5423

2N5424

2N5591

2N5641

2N5642

2N5643

CASE

SIZE

TO-60

TO-5

TO-60

TO-5

TO-60

MT-72j

TO-5

MT-72j

MT-66

TO-60

TO-5

TO-60

MT-

MT-716

MT-72e

VeB

RATED

BREAKDOWN

VOLTAGES

VEB

VeE

POWER OUT

VeE

13.6

13.5

13.6

(MHz)

400

175

400

175

1000

400

175

500

1000

400

1000

175

PIE

(W)

2.0

1.0

.25

3.5

4.0

0.1

1.0

2.0

4.0

1.0

3.0

1.0

2.5

6.0

0.1

.075

.25

1.15

1.7

3.5

5.0

.625

3.0

0.2

.316

.32

.125

1.25

4.1

9.5

1.0

2.8

8.0

(W)

10.0

3.0

2.5

13.5

10.0

1.0

4.0

7.0

12.0

2.5

8.0

3.3

13.5

24.0

1.0

.75

1.0

2.5

5.0

20.0

15.0

12.5

24.0

1.2

1.0

5.0

13.0

25.0

7.0

20.0

40.0

COB

(pf)

12.0

25.0

3.0

20.0

45.0

10.0

15.0

8.0

25.0

45.0

4.0

3.5

5.0

10.0

12.0

85.0

25.0

3.5

3.0

3.5

5.0

25.0

45.0

120.0

15.0

35.0

65.0

(MHz)

Min.

200

500 Typ

350

250

500

250

200

350

400

300

200

500

700

600

500 Typ

200

500

100

500

1200

300

250

200

300

250

200

•

4.0

3.5

4.0

2.0

3.5

4.0

3.5

3.0

4.0

260~1500~

MIN

•

TO-60

TO-5

See Pg. 112 for outline drawing

2N5642 Related Products

	2N5642	2N4128	2N3632	2N4041	2N5643
Description	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN
package instruction	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4	TO-60, 3 PIN	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4
Contacts	4	4	3	4	4
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	3 A	4 A	3 A	1 A	5 A
Collector-emitter maximum voltage	35 V	40 V	40 V	40 V	35 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	10	5	10	5
JESD-30 code	O-CRPM-F4	O-CRPM-F4	O-MUPM-P3	O-CRPM-F4	O-CRPM-F4
Number of components	1	1	1	1	1
Number of terminals	4	4	3	4	4
Maximum operating temperature	200 °C	175 °C	200 °C	175 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	30 W	40 W	23 W	18 W	60 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	FLAT	FLAT	PIN/PEG	FLAT	FLAT
Terminal location	RADIAL	RADIAL	UPPER	RADIAL	RADIAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	200 MHz	250 MHz	400 MHz	200 MHz
Base Number Matches	1	1	1	1	1
Collector-based maximum capacity	35 pF	45 pF	-	8 pF	65 pF

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