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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N4041
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2N4041

Description
RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size57KB，1 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric Compare View All

2N4041 Overview

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN

2N4041 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-CRPM-F4
Contacts4
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeO-CRPM-F4
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)18 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Base Number Matches1

Preview

Download Datasheet
rf power
transistors
114
SILICON NPN/RF
I
TYPE
NUMBERS
2N2876
2N3375
2N3553
2N3632
2N3733
2N3866
2N3924
2N3926
2N3927
2N4012
2N4040
2N4041
2N4127
2N4128
2N4427
2N4428
2N4429
2N4430
2N4431
2N4440
2N4933
2N5016
2N5070
2N5071
2N5090
2N5102
2N5108
2N5109
2N5421
2N5423
2N5424
2N5591
2N5641
2N5642
2N5643
CASE
SIZE
TO-60
TO-60
TO-5
TO-60
TO-60
TO-5
TO-5
TO-60
TO-60
TO-60
MT-72j
MT-72j
MT-72j
MT-72j
TO-5
TO-5
MT-72j
MT-66
MT-66
TO-60
TO-60
TO-60
TO-60
TO-60
TO-60
TO-60
TO-5
TO-5
TO-5
TO-60
TO-60
MT-
MT-716
MT-72e
MT-72e
VeB
80
65
65
65
65
55
36
36
36
65
60
60
60
60
40
55
55
55
55
65
70
65
65
65
55
55
55
40
36
36
36
36
65
65
65
RATED
BREAKDOWN
VOLTAGES
VEB
VeE
60
40
40
40
40
30
18
18
18
40
40
40
40
40
20
35
35
40
40
40
35
30
30
30
30
30
30
20
18
18
18
18
35
35
35
POWER OUT
@
@
@
VeE
28
28
28
28
28
28
13.6
13.6
13.6
13.6
28
28
25
25
12
28
28
28
28
28
24
28
28
24
28
28
28
28
13.5
13.5
13.5
13.6
28
28
28
fo
(MHz)
50
400
175
175
400
400
175
175
175
1000
400
400
175
175
175
500
1000
1000
1000
400
70
400
30
70
400
400
1000
1000
175
175
175
175
175
175
175
PIE
(W)
2.0
1.0
.25
3.5
4.0
0.1
1.0
2.0
4.0
1.0
3.0
1.0
2.5
6.0
0.1
.075
.25
.7
1.15
1.7
3.5
5.0
.625
3.0
0.2
0.2
.316
.32
.125
1.25
4.1
9.5
1.0
2.8
8.0
Po
(W)
10.0
3.0
2.5
13.5
10.0
1.0
4.0
7.0
12.0
2.5
8.0
3.3
13.5
24.0
1.0
.75
1.0
2.5
5.0
5.0
20.0
15.0
12.5
24.0
1.2
1.2
1.0
1.0
1.0
5.0
13.0
25.0
7.0
20.0
40.0
COB
(pf)
20
12.0
12.0
25.0
25.0
3.0
20.0
20.0
45.0
10.0
15.0
8.0
25.0
45.0
4.0
3.5
3.5
5.0
10.0
12.0
85.0
25.0
85
85
3.5
3.5
3.0
3.5
5.0
25.0
45.0
120.0
15.0
35.0
65.0
fT
(MHz)
Min.
200
500 Typ
350
250
250
500
250
250
200
350
400
400
300
200
500
700
700
600
600
500 Typ
200
500
100
100
500
500
1200
1200
300
300
250
200
300
250
200
I
i
I
I
•
I
I
4.0
4.0
4.0
4.0
4.0
3.5
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
2.0
3.5
3.5
3.5
3.5
4.0
4.0
4.0
4.0
4.0
3.5
3.5
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
!
I
I
I
!
I
I
I
I
I
r
vm
260~1500~
I
MIN
~
•
I
I
,
TO-60
TO-5
See Pg. 112 for outline drawing
I
I

2N4041 Related Products

2N4041 2N5642 2N4128 2N3632 2N5643
Description RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN
package instruction POST/STUD MOUNT, O-CRPM-F4 POST/STUD MOUNT, O-CRPM-F4 POST/STUD MOUNT, O-CRPM-F4 TO-60, 3 PIN POST/STUD MOUNT, O-CRPM-F4
Contacts 4 4 4 3 4
Reach Compliance Code unknow unknow unknow unknow unknow
Maximum collector current (IC) 1 A 3 A 4 A 3 A 5 A
Collector-emitter maximum voltage 40 V 35 V 40 V 40 V 35 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 5 10 5 5
JESD-30 code O-CRPM-F4 O-CRPM-F4 O-CRPM-F4 O-MUPM-P3 O-CRPM-F4
Number of components 1 1 1 1 1
Number of terminals 4 4 4 3 4
Maximum operating temperature 175 °C 200 °C 175 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED METAL CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 18 W 30 W 40 W 23 W 60 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form FLAT FLAT FLAT PIN/PEG FLAT
Terminal location RADIAL RADIAL RADIAL UPPER RADIAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 400 MHz 250 MHz 200 MHz 250 MHz 200 MHz
Base Number Matches 1 1 1 1 1
Collector-based maximum capacity 8 pF 35 pF 45 pF - 65 pF

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