RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | IXYS |
package instruction | HERMETIC SEALED PACKAGE-2 |
Contacts | 2 |
Reach Compliance Code | compliant |
Configuration | SINGLE |
FET technology | METAL SEMICONDUCTOR |
highest frequency band | K BAND |
JESD-30 code | S-CDFM-F2 |
JESD-609 code | e4 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | DEPLETION MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | SQUARE |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Gold (Au) |
Terminal form | FLAT |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | GALLIUM ARSENIDE |
MWT-971 | MWT-973 | MWT-9 | MWT-970 | |
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Description | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2 | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
highest frequency band | K BAND | K BAND | K BAND | K BAND |
JESD-30 code | S-CDFM-F2 | X-CXMW-F4 | R-XUUC-N3 | S-CQMW-F4 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 4 | 3 | 4 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED |
Package shape | SQUARE | UNSPECIFIED | RECTANGULAR | SQUARE |
Package form | FLANGE MOUNT | MICROWAVE | UNCASED CHIP | MICROWAVE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES |
Terminal form | FLAT | FLAT | NO LEAD | FLAT |
Terminal location | DUAL | UNSPECIFIED | UPPER | QUAD |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
Is it lead-free? | Lead free | Lead free | - | Lead free |
Is it Rohs certified? | conform to | conform to | - | conform to |
Maker | IXYS | IXYS | - | IXYS |
package instruction | HERMETIC SEALED PACKAGE-2 | - | DIE-3 | HERMETIC SEALED PACKAGE-4 |
Contacts | 2 | - | 3 | 4 |
JESD-609 code | e4 | e4 | - | e4 |
Humidity sensitivity level | 1 | 2 | - | 1 |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
Terminal surface | Gold (Au) | Gold (Au) | - | Gold (Au) |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |