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STK14N05{SOT-194}

Description
14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size154KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

STK14N05{SOT-194} Overview

14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET

STK14N05{SOT-194} Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instructionFLANGE MOUNT, R-PSFM-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)35 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)150 pF
JESD-30 codeR-PSFM-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment50 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum opening time (tons)165 ns

STK14N05{SOT-194} Related Products

STK14N05{SOT-194} STK14N06(SOT-194) STK14N06{SOT-194}
Description 14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 14A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET
Maker STMicroelectronics STMicroelectronics STMicroelectronics
package instruction FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 35 mJ 35 mJ 35 mJ
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 60 V 60 V
Maximum drain current (ID) 14 A 14 A 14 A
Maximum drain-source on-resistance 0.12 Ω 0.12 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 150 pF 150 pF 150 pF
JESD-30 code R-PSFM-G3 R-PSFM-G3 R-PSFM-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 56 A 56 A 56 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum opening time (tons) 165 ns 165 ns 165 ns
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