STK14N06(SOT-194) datasheet, PDF

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STK14N06(SOT-194): DescriptionPower Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size154KB，6 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STK14N06(SOT-194) Overview

Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

STK14N06(SOT-194) Parametric

Parameter Name	Attribute value
Maker	STMicroelectronics
package instruction	FLANGE MOUNT, R-PSFM-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	35 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF
JESD-30 code	R-PSFM-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum opening time (tons)	165 ns

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STK14N06(SOT-194) Related Products

	STK14N06(SOT-194)	STK14N05{SOT-194}	STK14N06{SOT-194}
Description	Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET	14A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics
package instruction	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	35 mJ	35 mJ	35 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	50 V	60 V
Maximum drain current (ID)	14 A	14 A	14 A
Maximum drain-source on-resistance	0.12 Ω	0.12 Ω	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF	150 pF	150 pF
JESD-30 code	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	50 W	50 W	50 W
Maximum pulsed drain current (IDM)	56 A	56 A	56 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum opening time (tons)	165 ns	165 ns	165 ns

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