FQI12N60CTU datasheet, PDF - EEWORLD Datasheet

FQI12N60CTU: Description12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3; CategoryDiscrete semiconductor The transistor; File Size1MB，10 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3

Parameter Name	Attribute value
Maker	Rochester Electronics
package instruction	LEAD FREE, I2PAK-3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	870 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A
Certification status	COMMERCIAL
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	FQI12N60CTU	FQB12N60CTM
Description	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
Maker	Rochester Electronics	Rochester Electronics
package instruction	LEAD FREE, I2PAK-3	LEAD FREE, D2PAK-3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	870 mJ	870 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	12 A	12 A
Maximum drain-source on-resistance	0.65 Ω	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A	48 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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