12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Maker | Rochester Electronics |
| package instruction | LEAD FREE, D2PAK-3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 870 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.65 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 48 A |
| Certification status | COMMERCIAL |
| surface mount | YES |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| FQB12N60CTM | FQI12N60CTU | |
|---|---|---|
| Description | 12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3 | 12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3 |
| Maker | Rochester Electronics | Rochester Electronics |
| package instruction | LEAD FREE, D2PAK-3 | LEAD FREE, I2PAK-3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 870 mJ | 870 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V | 600 V |
| Maximum drain current (ID) | 12 A | 12 A |
| Maximum drain-source on-resistance | 0.65 Ω | 0.65 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSIP-T3 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 48 A | 48 A |
| Certification status | COMMERCIAL | COMMERCIAL |
| surface mount | YES | NO |
| Terminal form | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
