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Datasheet> All Categories > Discrete semiconductor> The transistor> KSP43J18Z
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KSP43J18Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size53KB，3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSP43J18Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSP43J18Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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Download Datasheet
KSP42/43
HIGH VOLTAGE TRANSISTOR
•
Collector-Emitter Voltage: V
CEO
=KSP42: 300V
KSP43: 200V
•
Collector Dissipation: P
C
(max)=625mW
NPN EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector Base Voltage
: KST42
: KST43
Collector-Emitter Voltage
: KST42
: KST43
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
300
200
V
CEO
300
200
6
500
625
150
357
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
V
V
Rating
Unit
V
EBO
I
C
P
C
T
J
T
STG
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
: KST42
: KST43
*Collector -Emitter Breakdown Voltage
: KST42
: KST43
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST42
: KST43
Emitter Cut-off Current
: KST42
: KST43
*DC Current Gain
Symbol
BV
CBO
Test Conditions
I
C
=100µA, I
E
=0
300
200
BV
CEO
I
C
=1mA, I
B
=0
300
200
6
100
100
100
100
V
V
V
nA
nA
nA
nA
V
V
Min
Max
Unit
BV
EBO
I
CBO
I
E
=100µA, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
V
BE
=6V, I
C
=0
V
BE
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CB
=20V, I
E
=0
f=1MHz
V
CE
=20V, I
C
=10mA
f=100MHz
I
EBO
h
FE
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector-Base Capacitance
: KST42
: KST43
Current Gain Bandwidth Product
25
40
40
V
CE
(sat)
V
BE
(sat)
C
CB
0.5
0.9
3
4
50
V
V
pF
pF
MHz
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Rev. B
©
1999 Fairchild Semiconductor Corporation

KSP43J18Z Related Products

KSP43J18Z KSP42J18Z KSP42J05Z KSP43J05Z
Description Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 200 V 300 V 300 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz

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