BZM5221B_08 datasheet, PDF - EEWORLD Datasheet

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BZM5221B_08: Description2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; Categorysemiconductor Discrete semiconductor; File Size100KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZM5221B_08 Overview

2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

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BZM5221B SERIES

SURFACE MOUNT ZENER DIODES

VOLTAGE

2.4 to 75 Volts

POWER

500 mWatts

MICRO-MELF

Unit : inch (mm)

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

.040(1.0)

.048(1.2)DIA.

MECHANICAL DATA

• Case: Molded Glass MICRO-MELF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.008 grams

• Mounting Position: Any

• Packing information

T/R - 2.5K per 7" plastic Reel

.079(2.0)

.071(1.8)

.043(1.1)

.008(0.2)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25

Junction Temperature

Storage Temperature Range

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Symbol

Value

500

175

-65 to +175

Units

TOT

Parameter

Thermal Resi stance Juncti on to Ambi ent Ai r

Forward Voltage at I

= 200mA

Symbol

J A

Min.

Typ.

Max.

0.3

Uni ts

K/mW

Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.

STAD-DEC.22.2008

PAGE . 1

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