2N911 datasheet, PDF - EEWORLD Datasheet

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2N911: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18; CategoryDiscrete semiconductor The transistor; File Size92KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]

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2N911 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

2N911 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	CDIL[Continental Device India Pvt. Ltd.]
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	1.2 V

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Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	incompatible	incompatible	incompatible	incompatible	incompatible	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compli	compli	compli	compli	compli	compli	compli	compliant	compli
Collector-emitter maximum voltage	60 V	20 V	60 V	80 V	45 V	200 V	10 V	15 V	30 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	25	400	40	80	50	25	30	40	40
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	175 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.3 W	0.36 W	0.5 W	0.3 W	0.5 W	2 W	0.36 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	350 MHz	60 MHz	50 MHz	45 MHz	50 MHz	350 MHz	300 MHz	50 MHz	50 MHz
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	-	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.2 A	0.05 A	-	0.03 A	0.05 A	0.5 A	-	0.5 A	0.4 A
JESD-609 code	e0	e0	e0	-	e0	e0	e0	e0	e0	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
VCEsat-Max	1.2 V	0.4 V	0.35 V	5 V	0.5 V	0.5 V	-	0.4 V	1.5 V	5 V
Collector-based maximum capacity	-	4 pF	4.5 pF	15 pF	2 pF	4 pF	-	6 pF	35 pF	20 pF
Base Number Matches	-	1	1	1	1	1	1	1	1	-

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