Operating Temperature Range ...........................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to V
CC
, EN = V
L
(MAX13101E/MAX13102E/MAX13103E), MULT = V
L
or GND (MAX13108E),
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +1.65V, V
L
= +1.2V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
POWER SUPPLIES
V
L
Supply Range
V
CC
Supply Range
Supply Current from V
CC
V
L
V
CC
I
QVCC
I/O V
CC
_ = GND, I/O V
L
_ = GND
or I/O V
CC
_ = V
CC
, I/O V
L
_ = V
L
,
EN = V
L
, MULT = GND or V
L
I/O V
CC
_ = GND, I/O V
L
_ = GND
or I/O V
CC
_ = V
CC
, I/O V
L
_ = V
L
,
EN = V
L
, MULT = GND or V
L
T
A
= +25°C, EN = GND, I/O V
CC
_ = GND,
I/O V
L
_ = GND,
MAX13101E/MAX13102E/MAX13103E
T
A
= +25°C, EN = GND, I/O V
CC
_ = GND,
I/O V
L
_ = GND,
MAX13101E/MAX13102E/MAX13103E
T
A
= +25°C, EN = GND,
MAX13102E/MAX13103E
I/O V
CC
_ Tri-State Output
Leakage Current
T
A
= +25°C, MULT = GND (I/O V
CC
1 - I/O V
CC
8)
or MULT = V
L
(I/O V
CC
9 - I/O V
CC
16)
MAX13108E
T
A
= +25°C, EN = GND, MAX13101E/
MAX13103E
I/O V
L
_ Tri-State Output Leakage
Current
T
A
= +25°C, MULT = GND (I/O V
L
1 - I/O
V
L
8) or MULT = V
L
(I/OV
L
9 - I/O V
L
16)
MAX13108E
EN = GND, MAX13102E
4
1.2
1.65
0.03
V
CC
5.50
10
V
V
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Current from V
L
I
QVL
0.03
20
µA
V
CC
Shutdown Supply Current
I
SHDN-VCC
0.03
1
µA
V
L
Shutdown Supply Current
I
SHDN-VL
0.03
2
µA
0.02
1
µA
0.02
1
0.02
1
µA
0.02
1
I/O V
L
_ Pulldown Resistance
During Shutdown
2
10
kΩ
Maxim Integrated
MAX13101E/MAX13102E/
MAX13103E/MAX13108E
16-Channel Buffered CMOS
Logic-Level Translators
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to V
CC
, EN = V
L
(MAX13101E/MAX13102E/MAX13103E), MULT = V
L
or GND (MAX13108E),
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +1.65V, V
L
= +1.2V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
I/O V
CC
_ Pulldown Resistance
During Shutdown
EN or MULT Input Leakage
Current
LOGIC-LEVEL THRESHOLDS
I/O V
L
_ Input-Voltage High
Threshold
I/O V
L
_ Input-Voltage Low
Threshold
I/O V
CC
_ Input-Voltage High
Threshold
I/O V
CC
_ Input-Voltage Low
Threshold
EN, MULT Input-Voltage High
Threshold
EN, MULT Input-Voltage Low
Threshold
I/O V
L
_ Output-Voltage High
I/O V
L
_ Output-Voltage Low
I/O V
CC
_ Output-Voltage High
I/O V
CC
_ Output-Voltage Low
V
IHL
V
ILL
V
IHC
V
ILC
V
IH-SHDN
V
IL-SHDN
V
OHL
V
OLL
V
OHC
V
OLC
0.4
I/O V
L
_ source current = 20µA, I/O V
CC
_
≥
V
IHC
V
L
- 0.4
I/O V
L
_ sink current = 20µA, I/O V
CC
_
≤
V
ILC
I/O V
CC
_ source current = 20µA, I/O V
L
_
≥
V
IHL
V
CC
- 0.4
I/O V
CC
_ sink current = 20µA, I/O V
L
_
≤
V
ILL
I/O V
CC
side
I/O V
L
side
V
L
= 1.2V, V
CC
= 1.65V
V
L
= 1.2V, V
CC
= 1.65V
V
L
= 5V, V
CC
= 5V
V
L
= 1.2V, V
CC
= 1.65V
V
L
= 5V, V
CC
= 5V
V
L
= 1.2V, V
CC
= 1.65V
V
L
= 5V, V
CC
= 5V
V
L
= 1.2V, V
CC
= 1.65V
V
L
= 5V, V
CC
= 5V
Human Body Model
V
CC
/ 2
V
L
/ 2
20
60
5
15
5
30
5
20
7
±15
0.4
0.4
1/3 x
V
CC
V
L
- 0.4
1/3 x
V
L
2/3 x
V
CC
2/3 x
V
L
V
V
V
V
V
V
V
V
V
V
SYMBOL
CONDITIONS
EN = GND, MAX13101E
T
A
= +25°C
MIN
4
TYP
MAX
10
1
UNITS
kΩ
µA
RISE/FALL-TIME ACCELERATOR STAGE
Transition-Detect Threshold
Accelerator Pulse Duration
I/O V
L
_ Output-Accelerator Sink
Impedance
I/O V
CC
_ Output-Accelerator Sink
Impedance
I/O V
L
_ Output-Accelerator
Source Impedance
I/O V
CC
_ Output-Accelerator
Source Impedance
ESD PROTECTION
I/O V
CC
_
kV
V
ns
Ω
Ω
Ω
Ω
Maxim Integrated
3
MAX13101E/MAX13102E/
MAX13103E/MAX13108E
16-Channel Buffered CMOS
Logic-Level Translators
TIMING CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to V
CC
, EN = V
L
(MAX13101E/MAX13102E/MAX13103E), MULT = V
L
or GND (MAX13108E),
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +1.65V, V
L
= +1.2V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
I/O V
L
_ Rise Time
I/O V
L
_ Fall Time
I/O V
CC
_ Rise Time
I/O V
CC
_ Fall Time
Propagation Delay
(Driving I/O V
L
_)
Propagation Delay
(Driving I/O V
CC
_)
Channel-to-Channel Skew
Part-to-Part Skew
Propagation Delay from
I/O V
L
_ to I/O V
CC
_ After EN
Propagation Delay from
I/O V
CC
_ to I/O V
L
_ After EN
Maximum Data Rate
SYMBOL
t
RVL
t
FVL
t
RVCC
t
FVCC
t
PVL-VCC
t
PVCC-VL
t
SKEW
t
PPSKEW
t
EN-VCC
t
EN-VL
CONDITIONS
R
S
= 50Ω, C
I/OVL_
= 15pF, t
RISE
≤
3ns,
(Figures 2a, 2b)
R
S
= 50Ω, C
I/OVL_
= 15pF, t
FALL
≤
3ns,
(Figures 2a, 2b)
R
S
= 50Ω, C
I/OVCC_
= 50pF, t
RISE
≤
3ns,
(Figures 1a, 1b)
R
S
= 50Ω, C
I/OVCC_
= 50pF, t
FALL
≤
3ns,
(Figures 1a, 1b)
R
S
= 50Ω, C
I/OVCC_
= 50pF, t
RISE
≤
3ns,
(Figures 1a, 1b)
R
S
= 50Ω, C
I/OVL_
= 15pF, t
RISE
≤
3ns,
(Figures 2a, 2b)
R
S
= 50Ω, C
I/OVCC_
= 50pF, C
I/OVL_
=
15pF, t
RISE
≤
3ns
R
S
= 50Ω, C
I/OVCC_
= 50pF, C
I/OVL_
=
15pF, t
RISE
≤
3ns,
ΔT
A
= +20°C (Notes 3, 4)
C
I/OVCC_
= 50pF (Figure 3)
C
I/OVL_
= 15pF (Figure 4)
R
SOURCE
= 50Ω, C
I/OVCC_
= 50pF,
C
I/OVL_
= 15pF, t
RISE
≤
3ns
20
MIN
TYP
MAX
15
15
15
15
20
20
5
10
1
1
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
Mbps
Note 1:
All units are 100% production tested at T
A
= +25°C. Limits over the operating temperature range are guaranteed by design
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