Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | D2PAK |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 28 A |
Maximum drain-source on-resistance | 0.025 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 95 A |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
UT40N03T-TQ2-R | UT40N03T-TN3-R | UT40N03T-TQ2-T | UT40N03T-TN3-T | |
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Description | Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN |
Parts packaging code | D2PAK | TO-252 | D2PAK | TO-252 |
package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 4 | 4 | 4 | 4 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V | 30 V | 30 V | 30 V |
Maximum drain current (ID) | 28 A | 28 A | 28 A | 28 A |
Maximum drain-source on-resistance | 0.025 Ω | 0.025 Ω | 0.025 Ω | 0.025 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB | TO-252 | TO-263AB | TO-252 |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 95 A | 95 A | 95 A | 95 A |
surface mount | YES | YES | YES | YES |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 |