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UT40N03T-TQ2-R

Description
Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size222KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

UT40N03T-TQ2-R Overview

Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

UT40N03T-TQ2-R Parametric

Parameter NameAttribute value
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)95 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT40N03T
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* R
DS(ON)
= 25mΩ @V
GS
= 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
Power MOSFET
SYMBOL
2.Drain
1.Gate
Lead-free:
UT40N03L
Halogen-free: UT40N03G
3.Source
ORDERING INFORMATION
Normal
UT40N03T-TN3-R
UT40N03T-TN3-T
UT40N03T-TQ2-R
UT40N03T-TQ2-T
Ordering Number
Lead Free
UT40N03TL-TN3-R
UT40N03TL-TN3-T
UT40N03TL-TQ2-R
UT40N03TL-TQ2-T
Halogen Free
UT40N03TG-TN3-R
UT40N03TG-TN3-T
UT40N03TG-TQ2-R
UT40N03TG-TQ2-T
Package
TO-252
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tube
www.unisonic.com.tw
1 of 5
QW-R502-172.B
Copyright © 2008 Unisonic Technologies Co., Ltd

UT40N03T-TQ2-R Related Products

UT40N03T-TQ2-R UT40N03T-TN3-R UT40N03T-TQ2-T UT40N03T-TN3-T
Description Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Parts packaging code D2PAK TO-252 D2PAK TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 28 A 28 A 28 A 28 A
Maximum drain-source on-resistance 0.025 Ω 0.025 Ω 0.025 Ω 0.025 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-252 TO-263AB TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 95 A 95 A 95 A 95 A
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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