1N4148W-T4 datasheet, PDF - EEWORLD Datasheet

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1N4148W-T4: DescriptionReverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA; CategoryDiscrete semiconductor Switching diode; File Size274KB，2 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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1N4148W-T4 Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA

1N4148W-T4 Parametric

Parameter Name	Attribute value
Reverse recovery time (trr)	4ns
DC reverse withstand voltage (Vr)	75V
Average rectified current (Io)	150mA
Forward voltage drop (Vf)	1.25V @ 150mA

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Plastic-Encapsulate Diodes

FAST SWITCHING DIODES

1N4148W

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

MARKING:

SOD-123

MAXIMUM RATINGS (TA=25

Parameter

Non-Repetitive Peak reverse voltage

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

RMS Reverse Voltage

Forward Continuous Current

Average Rectified Output Current

Peak forward surge current @=1.0μs

Peak forward surge current @=1.0s

Power Dissipation

Thermal

Junction temperature

Storage temperature

unless otherwise noted)

Symbol

Value

100

300

150

2.0

1.0

500

250

150

-65~+150

Units

RRM

RWM

R(RMS)

FSM

θJA

STG

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Reverse Recovery Time

Symbol

Min

Typ

Max

0.715

0.855

1.0

1.25

Unit

μA

Conditions

=1mA

=10 mA

=50 mA

=150 mA

=75 V

=20 V

=0V,f=1MHz

=10mA Irr=0.1XI

=100

Ω

GUANGDONG HOTTECH

INDUSTRIAL CO., LTD

Page:P2-P1

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