UT40N03T-TQ2-T datasheet, PDF - EEWORLD Datasheet

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UT40N03T-TQ2-T: DescriptionPower Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size222KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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UT40N03T-TQ2-T Overview

Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

UT40N03T-TQ2-T Parametric

Parameter Name	Attribute value
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	28 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	95 A
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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UNISONIC TECHNOLOGIES CO., LTD

UT40N03T

N-CHANNEL

ENHANCEMENT MODE

FEATURES

* R

DS(ON)

= 25mΩ @V

= 10 V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

Power MOSFET

SYMBOL

2.Drain

1.Gate

Lead-free:

UT40N03L

Halogen-free: UT40N03G

3.Source

ORDERING INFORMATION

Normal

UT40N03T-TN3-R

UT40N03T-TN3-T

UT40N03T-TQ2-R

UT40N03T-TQ2-T

Ordering Number

Lead Free

UT40N03TL-TN3-R

UT40N03TL-TN3-T

UT40N03TL-TQ2-R

UT40N03TL-TQ2-T

Halogen Free

UT40N03TG-TN3-R

UT40N03TG-TN3-T

UT40N03TG-TQ2-R

UT40N03TG-TQ2-T

Package

TO-252

TO-263

Pin Assignment

Packing

Tape Reel

Tube

Tape Reel

Tube

www.unisonic.com.tw

1 of 5

QW-R502-172.B

UT40N03T-TQ2-T Related Products

	UT40N03T-TQ2-T	UT40N03T-TN3-R	UT40N03T-TQ2-R	UT40N03T-TN3-T
Description	Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN	Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Parts packaging code	D2PAK	TO-252	D2PAK	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	28 A	28 A	28 A	28 A
Maximum drain-source on-resistance	0.025 Ω	0.025 Ω	0.025 Ω	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-252	TO-263AB	TO-252
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	95 A	95 A	95 A	95 A
surface mount	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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