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2SC5012-T2FB

Description
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size44KB,7 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SC5012-T2FB Overview

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

2SC5012-T2FB Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)0.065 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz
Base Number Matches1
DATA SHEET
SILICON TRANSISTOR
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (f
T
= 9 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
0.3
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
1.25 ± 0.1
0.3
+0.1
–0.05
(LEADS 2, 3, 4)
(1.3)
ORDERING INFORMATION
2.0 ± 0.2
0.60 0.65
XYZ
1
4
2SC5012-T1
3 Kpcs/Reel.
perforation side of the tape.
2SC5012-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
0.9 ± 0.1
0.3
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to
0.4
+0.1
–0.05
0 to 0.1
*
Please contact with responsible NEC person, if you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5012)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
150
150
–65 to +150
V
V
V
mA
mW
˚C
˚C
Caution; Electrostatic Sensitive Device.
Document No. P10400EJ2V0DS00 (2nd edition)
(Previous No. TD-2412)
Date Published July 1995 P
Printed in Japan
©
0.3
+0.1
–0.05
0.15
+0.1
–0.05
PART
NUMBER
QUANTITY
PACKING STYLE
(1.25)
2
3
1993
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