MAS110S
MAS110S
Fast Turn-off Asymmetric Thyristor/Diode Module
Replaces April 1999 version, DS4200-4.0
DS4200-5.0 January 2000
APPLICATIONS
q
q
q
q
High Frequency High Power Choppers And Inverters.
Ultrasonic Generators.
Welding.
PWM Inverters.
KEY PARAMETERS
V
DRM
1400V
I
TSM
2000A
I
T(AV)
per arm
110A
V
isol
2500V
t
q
10/12/15
µ
s
DESCRIPTION
The MAS 110S is a fast thyristor/diode module in an
electrically isolated package. The semiconductors are are
pressure contact mounted giving high resistance to
thermal fatigue, and having excellent heat dissipation
qualities.
Isolation medium is non-toxic alumina.
The MAS110S is recognised under the 'Recognised
Component Program of Underwriters Laboratories Inc.
USA. File number E151069.
Outline type code: MAS110S
See Package Details for further information.
Fig.1 Package outline (not to scale)
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
800
600
Conditions
1
G
1
K
1
2
MAS110S 14
MAS110S 12
MAS110S 10
MAS110S 08
MAS110S 06
T
vj
= 125˚C,
I
DRM
= 50mA,
V
DSM
= V
DRM
+ 100V
Fig.2 Single circuit
For full description of part number see 'Ordering Information'.
THYRISTOR CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, T
case
= 75
o
C
T
case
= 75
o
C
Max.
110
175
Units
A
A
1/9
MAS110S
THYRISTOR SURGE RATINGS
Symbol
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 0% V
DRM
Max.
2.0
20.0 x 10
3
Units
kA
A
2
s
THYRISTOR DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
DRM
dV/dt
dI/dt
Parameter
Maximum on-state voltage
Peak off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Conditions
At 600A peak, T
case
= 25
o
C
At V
DRM
, T
case
= 125
o
C
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
From 67% V
DRM
to 600A,
Gate source 20V, 20Ω
t
r
= < 0.5µs, T
j
= 125˚C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
I
T
= 100A, T
j
= 125˚C,
dI
R
/dt = 30A/µs, V
GK
= 0V
dV/dt = 20V/µs to 60%
V
DRM
, V
R
= 1V.
t
q
code: W
t
q
code: S
t
q
code: X
Repetitive 50Hz
Min.
-
-
-
-
Max.
2.9
70
1000
500
Units
V
mA
V/µs
A/µs
V
T(TO)
r
T
t
q
Threshold voltage
On-state slope resistance
Turn-off time
-
-
-
-
-
1.6
1.4
10
12
15
V
mΩ
µs
µs
µs
2/9
MAS110S
THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
-
Average timing = 10ms
Conditions
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 30Ω
V
DRM
= 12V, T
case
= 25
o
C
Typ.
-
-
-
-
-
-
Max.
4.0
250
7.0
10
50
15
Units
V
mA
V
A
W
W
DIODE CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, T
case
= 75
o
C
T
case
= 75
o
C
Max.
112
175
Units
A
A
DIODE SURGE RATINGS - PER ARM
Symbol
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 130
o
C
V
R
= 0% V
RRM
Max.
3.5
61.25 x 10
3
Units
kA
A
2
s
DIODE DYNAMIC CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
V
TO
r
T
Forward voltage
Peak reverse current
Reverse recovery time
Threshold voltage
Forward slope resistance
Parameter
Conditions
At 600A, T
case
= 25˚C.
At V
RRM
, T
case
= 125˚C.
T
case
= 125˚C, dI
R
/dt = -50V/µs, I
FM
= 200A
At T
vj
= 125˚C.
At T
vj
= 125˚C.
Max.
2.65
70
1.3
1.6
1.5
Units
V
mA
µs
V
mΩ
3/9
MAS110S
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
(Thyristor or diode)
Thermal resistance - case to heatsink
(Thyristor or diode)
Virtual junction temperature
Operating temperature range
Storage temperature range
Isolation voltage
Mounting torque
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz.
dc
Conditions
Min.
-
Max.
0.21
Units
o
C/W
R
th(c-h)
Mounting force 6Nm
with mounting compound.
-
-
-
0.07
o
C/W
T
vj
T
op
T
stg
V
isol
-
-
-40
-40
-
-
125
125
125
2.5
6.0
o
C
o
C
C
o
kV
Nm
ORDERING INFORMATION
The module type number is made up as follows:
MAS XXX S XX W
Turn-off time code
Voltage grade. V
DRM
/100
Single thyristor/diode configuration
Nominal I
F(AV)
at T
case
= 75˚C
Pressure contact asymmetric thyristor/diode module
Examples:
MAS 110 S 12 W
MAS 110 S 08 X
MODULE MOUNTING RECOMMENDATIONS
s
Adequate heatsinking is required to maintain the base
temperature at 75
o
C if full rated current is to be achieved. Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
and loss curves in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if required.
s
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
s
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite™ or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
s
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
s
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 6Nm (55lb.ins) is
reached at both ends.
s
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
4/9
MAS110S
Curves
2000
Instantaneous on-state current I
T
- (A)
1500
T
j
= 125˚C
1000
500
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage V
T
- (V)
5.0
Fig.3 Maximum (limit) on-state characteristics (thyristor only)
5000
4000
Instantaneous forward current I
F
- (A)
3000
Tj = 125˚C
2000
1000
0
0
2.0
4.0
6.0
Instantaneous forward voltage V
F
- (V)
8.0
10.0
Fig.4 Maximum (limit) forward characteristics (diode only)
5/9