2N6851 datasheet, PDF - EEWORLD Datasheet

2N6851: DescriptionPower Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,; CategoryDiscrete semiconductor The transistor; File Size93KB，1 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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2N6851 Overview

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

Parameter Name	Attribute value
Maker	TEMIC
Reach Compliance Code	unknow
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON

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