c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
C
= 25 °C.
g. Package limited.
S16-1125-Rev. A, 06-Jun-16
Document Number: 75680
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSA72DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 10 A
MIN.
40
-
-
1.1
-
-
-
30
-
-
-
-
TYP.
-
25
-5.3
-
-
-
-
-
0.00285
0.00385
70
3240
455
60
0.026
41.5
19.5
8.7
4.2
18.5
1.4
10
20
24
7
29
85
30
35
-
-
0.74
31
23
15
16
MAX.
-
-
-
2.4
± 100
1
10
-
0.0035
0.0048
-
-
-
-
0.052
63
30
-
-
-
2.5
20
40
48
14
58
170
60
70
47.5
150
1.1
62
46
-
-
UNIT
V
mV/°C
V
nA
μA
A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
pF
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
nC
ns
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= 5 A, V
GS
= 0 V
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1125-Rev. A, 06-Jun-16
Document Number: 75680
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSA72DN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
150
10000
80
1000
1st line
2nd line
60
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
120
1000
1st line
2nd line
100
30
T
C
= 125 °C
T
C
= -55 °C
90
T
C
= 25 °C
40
100
V
GS
= 3 V
60
20
V
GS
= 2 V
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Axis Title
0.005
10000
4000
Transfer Characteristics
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
1000
1st line
2nd line
0.003
V
GS
= 10 V
2nd line
C - Capacitance (pF)
0.004
3200
V
GS
= 4.5 V
1000
1st line
2nd line
C
oss
2400
1600
100
100
0.002
800
C
rss
0.001
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Capacitance
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 10 A
V
GS
= 10 V
10000
8
V
DS
= 20 V
1.7
1000
1st line
2nd line
V
DS
= 30 V
1000
1st line
2nd line
100
10
6
V
DS
= 10 V
1.4
V
GS
= 4.5 V
4
100
2
1.1
0.8
0
0
9
18
27
36
45
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1125-Rev. A, 06-Jun-16
Document Number: 75680
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSA72DN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
Axis Title
100
10000
0.015
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
2nd line
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.012
1000
1st line
2nd line
100
0.003
T
J
= 25 °C
1000
1st line
2nd line
1
T
J
= 25 °C
0.009
T
J
= 125 °C
0.1
100
0.01
0.006
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
Axis Title
0.5
10000
On-Resistance vs. Gate-to-Source Voltage
Axis Title
100
10000
0.2
2nd line
V
GS(th)
- Variance (V)
1000
1st line
2nd line
-0.1
I
D
= 5 mA
80
1000
2nd line
Power (W)
1st line
2nd line
100
20
10
0.01
0.1
Time (s)
2nd line
1
10
60
-0.4
I
D
= 250 μA
40
100
-0.7
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
1 ms
10 ms
Limited by R
DS(on) (1)
1
100
100 ms
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
1s
10 s
DC
0.01
0.01
(1)
10
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-1125-Rev. A, 06-Jun-16
Document Number: 75680
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
SiSA72DN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
Axis Title
100
10000
Vishay Siliconix
80
2nd line
I
D
- Drain Current (A)
1000
Package limited
40
100
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
Current Derating
a
Axis Title
65
10000
2.0
Axis Title
10000
52
1000
2nd line
Power (W)
1st line
2nd line
39
2nd line
Power (W)
1.6
1000
1st line
2nd line
100
0.4
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.2
26
100
13
0.8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1125-Rev. A, 06-Jun-16
Document Number: 75680
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
[color=#333333][size=14px] Society is constantly developing, technology is constantly improving, and wireless control should be considered the most prominent in the field of intelligence. Now wireless...
The above is my sensor circuit diagram. The magnification is switched through a CD4051. The sensor is 10 tons, model YZC-219. The output sensitivity is 2.0+-0.04mV/V. I choose to magnify 1000 times in...
Lora is one of the popular wireless communication methods nowadays. It has the characteristics of long distance and good anti-interference performance. Some netizens have ported the Lora driver to mic...
[i=s]This post was last edited by shihuntaotie on 2019-1-19 11:09[/i] [size=5] The original plan was to evaluate the battery life and power consumption in the third week. The company's DC power supply...
The packaging and testing market will reach US$25.5 billion in 2008(China Electronics News)Zhou Yanwu, Research Director of Shuiqingmuhua 2006-6-20 According to forecasts, the global IC packaging a...
Using a combination of hardware and software to reduce the BLDC motor inverter sleep mode power consumption to less than 10mW, and expand the output power to 1 horsepower applications
...[Details]
Image matching refers to identifying the same-name points between two or more images through a certain matching algorithm. For example, in two-dimensional image matching, by comparing the correlati...[Details]
Abstract: This paper summarizes the characteristics of high-power inverters using traditional hard-switching technology, the problems existing in the current research of high-power inverters, the r...[Details]
Streetlights are an indispensable lighting tool in the daily life of residents. With the rapid development of economy and urbanization, people have made improvements and optimizations to the stree...[Details]
0 Introduction
With the rapid development of China's economy, the number of vehicles has also increased dramatically. Coupled with the expansion of the population, the problem of traffic congestion ...[Details]
A government-backed supercomputer project is expected to surpass rivals from the United States and China in an international computer speed ranking to be announced this month, reclaiming the top spot...[Details]
Abstract In the entire LED industry chain, from chips to packaging and finished products, all the photoelectric indicators of the products need to be tested. However, most LED manufacturers will...[Details]
The stepper motor is an open-loop control motor that converts electrical pulse signals into angular displacement or linear displacement. In the case of non-overload, the motor's speed and stop posi...[Details]
AMD and Qualcomm Collaborate to Optimize FastConnect Connectivity Solutions for AMD Ryzen Processors
Collaboration Brings Remote Wi-Fi Management Capabilities to IT Administrators Th...[Details]
In recent years, microparticles have attracted widespread interest due to their unique shapes, complex structures, and the ability to achieve multifunctional integration in individuals. They have b...[Details]
Dimmable fluorescent lamps have obvious power-saving effects, so they have been rapidly developed and applied in recent years. Fluorescent lamps are low-voltage gas discharge lamps and non-resistive l...[Details]
System: Linux Mint XFCE 64bit software: 1. SW4STM32 2. STM32CubeMX For the installation tutorials of these two software in Linux, please see my other blog post Detailed process of configuring s...[Details]
(Image source: LIMO official website) LiDAR is a key technology for autonomous driving. In order to accurately detect the distance between the vehicle and the static and dynamic environment, the...[Details]
This application note provides design guidelines for the optomechanical part of the MAX25205 and MAX25405 gesture sensors. A key design issue in gesture detection systems based on infrared (IR) tec...[Details]
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
