BCW 66KF E6327 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> The transistor> Bipolar transistor - a bipolar junction transistor (BJT)> BCW 66KF E6327

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BCW 66KF E6327: DescriptionBipolar Transistor - Bipolar Junction Transistor (BJT) NPN 45.0 V 100 mA; Categorysemiconductor Discrete semiconductor The transistor Bipolar transistor - a bipolar junction transistor (BJT); File Size522KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCW 66KF E6327 Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 45.0 V 100 mA

BCW 66KF E6327 Parametric

Parameter Name	Attribute value
Maker	Infineon
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style	SMD/SMT
Package/box	SOT-23-3
Transistor polarity	NPN
Configuration	Single
Collector-emitter maximum voltage VCEO	45 V
Collector-base voltage VCBO	75 V
Emitter-Base voltage VEBO	5 V
Collector-emitter saturation voltage	450 mV
Maximum DC collector current	800 mA
Gain bandwidth product fT	170 MHz
Minimum operating temperature	- 65 C
Maximum operating temperature	+ 150 C
series	BCW66
high	1 (Max) mm
length	2.9 mm
Encapsulation	Cut Tape
Encapsulation	MouseReel
Encapsulation	Reel
width	1.3 mm
Pd-power dissipation	500 mW (1/2 W)
Factory packaging quantity	3000
unit weight	8 mg

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BCW66K

NPN Silicon AF Transistors

•

For general AF applications

•

High current gain

•

Low collector-emitter saturation voltage

•

Complementary type: BCW68 (PNP)

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

Type

BCW66KF

BCW66KG

BCW66KH

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Marking

EFs

EGs

EHs

1=B

Pin Configuration

2=E

3=C

Package

SOT23

Symbol

CEO

CBO

EBO

tot

stg

Value

800

100

200

500

150

-65 ... 150

Unit

°C

Peak collector current,

≤

10 ms

Base current

Peak base current

Total power dissipation-

≤

115 °C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Symbol

thJS

Value

≤

Unit

K/W

2011-09-30

BCW 66KF E6327 Related Products

	BCW 66KF E6327	BCW-66KH-E6327	BCW 66KH B6327
Description	Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 45.0 V 100 mA	Bipolar Transistors - BJT NPN 45.0 V 100 mA	Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN Silicon AF TRANSISTOR
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)	Bipolar Transistors - BJT	Bipolar Transistor - Bipolar Junction Transistor (BJT)
Configuration	Single	Single	Single
Maker	Infineon	-	Infineon
Package/box	SOT-23-3	-	SOT-23-3
Transistor polarity	NPN	-	NPN
Collector-emitter maximum voltage VCEO	45 V	-	45 V
Collector-base voltage VCBO	75 V	-	75 V
Emitter-Base voltage VEBO	5 V	-	5 V
Maximum DC collector current	800 mA	-	0.8 A
Gain bandwidth product fT	170 MHz	-	170 MHz
Maximum operating temperature	+ 150 C	-	+ 150 C
series	BCW66	-	BCW66
high	1 (Max) mm	-	1 (Max) mm
length	2.9 mm	-	2.9 mm
Encapsulation	Reel	-	Reel
width	1.3 mm	-	1.3 mm
Pd-power dissipation	500 mW (1/2 W)	-	500 mW (1/2 W)
Factory packaging quantity	3000	-	30000
unit weight	8 mg	-	8 mg

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