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MA3S79500L

Description
DIODE SCHOTTKY 30V 30MA SSMINI3
Categorysemiconductor    Discrete semiconductor   
File Size236KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA3S79500L Overview

DIODE SCHOTTKY 30V 30MA SSMINI3

MA3S79500L Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)30V
Current - average rectification (Io)30mA(DC)
Voltage at different If - Forward (Vf1V @ 30mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)1ns
Current at different Vr - Reverse leakage current30µA @ 30V
Capacitance at different Vr, F1.5pF @ 1V,1MHz
Installation typesurface mount
Package/casingSC-89,SOT-490
Supplier device packagingSS mini type 3-F2
Operating Temperature - Junction125°C (maximum)
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3S795
(MA795)
Silicon epitaxial planar type
Unit: mm
0.80
±0.05
For switching
Features
High-density mounting is possible
Forward voltage V
F
, optimum for low voltage rectification
Low V
F
type of MA3X704A (MA704A)
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
0.28
±0.05
0.12
+0.05
–0.02
(0.44)
(0.44)
2
3
1.60
±0.05
(0.80)
M
ain
Di
sc te
on na
tin nc
ue e/
d
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
0.28
±0.05
(0.51)
0 to 0.1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage
Maximum peak reverse voltage
Forward current
V
RM
I
FM
T
j
Peak forward current
Junction temperature
Storage temperature
T
stg
−55
to
+125
Electrical Characteristics
T
a
=
25°C
±
3°C
tin
ue
Parameter
Symbol
V
F1
V
F2
I
R
t
rr
η
C
t
Forward voltage
/D
Reverse current
an
ce
Terminal capacitance
Reverse recovery time
*
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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Rating
30
30
30
Unit
V
V
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-81
0.60
+0.05
–0.03
SSMini3-F2 Package
mA
°C
°C
150
125
mA
Marking Symbol: M2M
Internal Connection
3
1
Conditions
Min
Typ
Max
0.3
on
I
F
=
1 mA
(0.15)
Unit
V
isc
I
F
=
30 mA
V
R
=
30 V
1.0
30
µA
pF
ns
%
V
R
=
1 V, f
=
1 MHz
1.5
Ma
int
en
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
1.0
65
V
IN
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
The part number in the parenthesis shows conventional part number.
(0.375)
0.88
+0.05
–0.03
Publication date: April 2004
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