EEWORLDEEWORLDEEWORLD

Part Number

Search

PMEG6030ELPX

Description
DIODE SCHOTTKY 60V 3A SOD128
Categorysemiconductor    Discrete semiconductor   
File Size696KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

PMEG6030ELPX Online Shopping

Suppliers Part Number Price MOQ In stock  
PMEG6030ELPX - - View Buy Now

PMEG6030ELPX Overview

DIODE SCHOTTKY 60V 3A SOD128

PMEG6030ELPX Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)60V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf670mV @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)12ns
Current at different Vr - Reverse leakage current1000nA @ 60V
Capacitance at different Vr, F315pF @ 1V,1MHz
Installation typesurface mount
Package/casingSOD-128
Supplier device packagingCFP5
Operating Temperature - Junction175°C (max)
PMEG6030ELP
7 May 2015
60 V, 3 A low leakage current Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Extremely low leakage current I
R
= 340 nA
Average forward current: I
F(AV)
≤ 3 A
Reverse voltage: V
R
≤ 60 V
Low forward voltage V
F
= 600 mV
High power capability due to clip-bonding technology
High temperature T
j
≤ 175 °C
Small and flat lead SMD plastic package
AEC-Q101 qualified
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; T
sp
≤ 155 °C;
square wave
T
j
= 25 °C
I
F
= 3 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
V
R
= 60 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
340
1000
nA
-
-
-
600
60
670
V
mV
Min
-
Typ
-
Max
3
Unit
A

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号