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BUY91

Description
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size10KB,1 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
Download Datasheet Parametric Compare View All

BUY91 Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

BUY91 Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage40 V
Number of terminals3
Maximum off time90 ns
Maximum on-time40 ns
Processing package descriptionTO-39, 3 PIN
each_compliYes
stateActive
structureSINGLE
Minimum DC amplification factor40
jedec_95_codeTO-39
jesd_30_codeO-MBCY-W3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature200 Cel
Packaging MaterialsMETAL
packaging shapeROUND
Package SizeCYLINDRICAL
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typePNP
wer_dissipation_max__abs_1 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency175 MHz

BUY91 Related Products

BUY91 2N5675 2N3467 2N5781 SF_2N5675
Description 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 POWER TRANSISTOR 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
state Active Active Active ACTIVE Active
Maximum collector current 1 A 1 A 1 A - 1 A
Maximum Collector-Emitter Voltage 40 V 40 V 40 V - 40 V
Number of terminals 3 3 3 - 3
Maximum off time 90 ns 90 ns 90 ns - 90 ns
Maximum on-time 40 ns 40 ns 40 ns - 40 ns
Processing package description TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN - TO-39, 3 PIN
each_compli Yes Yes Yes - Yes
structure SINGLE SINGLE SINGLE - SINGLE
Minimum DC amplification factor 40 40 40 - 40
jedec_95_code TO-39 TO-39 TO-39 - TO-39
jesd_30_code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3
jesd_609_code e0 e0 e0 - e0
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Number of components 1 1 1 - 1
Maximum operating temperature 200 Cel 200 Cel 200 Cel - 200 Cel
Packaging Materials METAL METAL METAL - METAL
packaging shape ROUND ROUND ROUND - ROUND
Package Size CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
larity_channel_type PNP PNP PNP - PNP
wer_dissipation_max__abs_ 1 W 1 W 1 W - 1 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL - COMMERCIAL
sub_category Other Transistors Other Transistors Other Transistors - Other Transistors
surface mount NO NO NO - NO
terminal coating TIN LEAD TIN LEAD TIN LEAD - TIN LEAD
Terminal form WIRE WIRE WIRE - WIRE
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER - AMPLIFIER
Transistor component materials SILICON SILICON SILICON - SILICON
Rated crossover frequency 175 MHz 175 MHz 175 MHz - 175 MHz
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