1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
| Parameter Name | Attribute value |
| Maximum collector current | 1 A |
| Maximum Collector-Emitter Voltage | 40 V |
| Number of terminals | 3 |
| Maximum off time | 90 ns |
| Maximum on-time | 40 ns |
| Processing package description | TO-39, 3 PIN |
| each_compli | Yes |
| state | Active |
| structure | SINGLE |
| Minimum DC amplification factor | 40 |
| jedec_95_code | TO-39 |
| jesd_30_code | O-MBCY-W3 |
| jesd_609_code | e0 |
| moisture_sensitivity_level | NOT SPECIFIED |
| Number of components | 1 |
| Maximum operating temperature | 200 Cel |
| Packaging Materials | METAL |
| packaging shape | ROUND |
| Package Size | CYLINDRICAL |
| eak_reflow_temperature__cel_ | NOT SPECIFIED |
| larity_channel_type | PNP |
| wer_dissipation_max__abs_ | 1 W |
| qualification_status | COMMERCIAL |
| sub_category | Other Transistors |
| surface mount | NO |
| terminal coating | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Rated crossover frequency | 175 MHz |
| 2N3467 | 2N5675 | BUY91 | 2N5781 | SF_2N5675 | |
|---|---|---|---|---|---|
| Description | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 | POWER TRANSISTOR | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| state | Active | Active | Active | ACTIVE | Active |
| Maximum collector current | 1 A | 1 A | 1 A | - | 1 A |
| Maximum Collector-Emitter Voltage | 40 V | 40 V | 40 V | - | 40 V |
| Number of terminals | 3 | 3 | 3 | - | 3 |
| Maximum off time | 90 ns | 90 ns | 90 ns | - | 90 ns |
| Maximum on-time | 40 ns | 40 ns | 40 ns | - | 40 ns |
| Processing package description | TO-39, 3 PIN | TO-39, 3 PIN | TO-39, 3 PIN | - | TO-39, 3 PIN |
| each_compli | Yes | Yes | Yes | - | Yes |
| structure | SINGLE | SINGLE | SINGLE | - | SINGLE |
| Minimum DC amplification factor | 40 | 40 | 40 | - | 40 |
| jedec_95_code | TO-39 | TO-39 | TO-39 | - | TO-39 |
| jesd_30_code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | - | O-MBCY-W3 |
| jesd_609_code | e0 | e0 | e0 | - | e0 |
| moisture_sensitivity_level | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| Number of components | 1 | 1 | 1 | - | 1 |
| Maximum operating temperature | 200 Cel | 200 Cel | 200 Cel | - | 200 Cel |
| Packaging Materials | METAL | METAL | METAL | - | METAL |
| packaging shape | ROUND | ROUND | ROUND | - | ROUND |
| Package Size | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL |
| eak_reflow_temperature__cel_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| larity_channel_type | PNP | PNP | PNP | - | PNP |
| wer_dissipation_max__abs_ | 1 W | 1 W | 1 W | - | 1 W |
| qualification_status | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | COMMERCIAL |
| sub_category | Other Transistors | Other Transistors | Other Transistors | - | Other Transistors |
| surface mount | NO | NO | NO | - | NO |
| terminal coating | TIN LEAD | TIN LEAD | TIN LEAD | - | TIN LEAD |
| Terminal form | WIRE | WIRE | WIRE | - | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM |
| ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | - | SILICON |
| Rated crossover frequency | 175 MHz | 175 MHz | 175 MHz | - | 175 MHz |
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