SF_2N5675 datasheet, PDF - EEWORLD Datasheet

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SF_2N5675: Description1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39; Categorysemiconductor Discrete semiconductor; File Size10KB，1 Pages; ManufacturerSEME-LAB; Websitehttp://www.semelab.co.uk

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SF_2N5675 Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

SF_2N5675 Parametric

Parameter Name	Attribute value
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	40 V
Number of terminals	3
Maximum off time	90 ns
Maximum on-time	40 ns
Processing package description	TO-39, 3 PIN
each_compli	Yes
state	Active
structure	SINGLE
Minimum DC amplification factor	40
jedec_95_code	TO-39
jesd_30_code	O-MBCY-W3
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	CYLINDRICAL
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	PNP
wer_dissipation_max__abs_	1 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Rated crossover frequency	175 MHz

SF_2N5675 Related Products

	SF_2N5675	2N5675	2N3467	BUY91	2N5781
Description	1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	POWER TRANSISTOR
state	Active	Active	Active	Active	ACTIVE
Maximum collector current	1 A	1 A	1 A	1 A	-
Maximum Collector-Emitter Voltage	40 V	40 V	40 V	40 V	-
Number of terminals	3	3	3	3	-
Maximum off time	90 ns	90 ns	90 ns	90 ns	-
Maximum on-time	40 ns	40 ns	40 ns	40 ns	-
Processing package description	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	-
each_compli	Yes	Yes	Yes	Yes	-
structure	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC amplification factor	40	40	40	40	-
jedec_95_code	TO-39	TO-39	TO-39	TO-39	-
jesd_30_code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-
jesd_609_code	e0	e0	e0	e0	-
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Number of components	1	1	1	1	-
Maximum operating temperature	200 Cel	200 Cel	200 Cel	200 Cel	-
Packaging Materials	METAL	METAL	METAL	METAL	-
packaging shape	ROUND	ROUND	ROUND	ROUND	-
Package Size	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
larity_channel_type	PNP	PNP	PNP	PNP	-
wer_dissipation_max__abs_	1 W	1 W	1 W	1 W	-
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors	-
surface mount	NO	NO	NO	NO	-
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-
Terminal form	WIRE	WIRE	WIRE	WIRE	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Rated crossover frequency	175 MHz	175 MHz	175 MHz	175 MHz	-

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