IPD50N06S4-09 datasheet, PDF - EEWORLD Datasheet

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IPD50N06S4-09: DescriptionMOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2; CategoryDiscrete semiconductor The transistor; File Size161KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPD50N06S4-09 Overview

MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2

IPD50N06S4-09 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-252
package instruction	GREEN, PLASTIC PACKAGE-3
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	87 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	71 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IPD50N06S4-09

OptiMOS

-T2

Power-Transistor

Product Summary

DS(on),max

9.0

PG-TO252-3-11

mΩ

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

IPD50N06S4-09

Package

PG-TO252-3-11

Marking

4N0609

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol

Conditions

=25°C,

=10V

=100°C,

=10V

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

D,pulse

tot

stg

=25°C

=25A

=25°C

Value

200

±20

-55 ... +175

55/175/56

°C

−

Unit

Rev. 1.2

page 1

2009-07-01

IPD50N06S4-09 Related Products

	IPD50N06S4-09	IPD50N06S409ATMA1
Description	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	GREEN, PLASTIC PACKAGE-3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	87 mJ	87 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	50 A	50 A
Maximum drain-source on-resistance	0.009 Ω	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-252
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	200 A
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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