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PSMN002-25P,127

Description
MOSFET RAIL PWR-MOS
CategoryDiscrete semiconductor    The transistor   
File Size288KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN002-25P,127 Overview

MOSFET RAIL PWR-MOS

PSMN002-25P,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
MakerNXP
Parts packaging codeTO-220AB
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0029 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

PSMN002-25P,127 Related Products

PSMN002-25P,127 PSMN002-25B118 PSMN002-25B,118 PSMN002-25B PSMN002-25P 934056778127 934056779118
Description MOSFET RAIL PWR-MOS MOSFET TAPE13 PWR-MOS PSMN002-25B 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN 75A, 25V, 0.00245ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maker NXP - NXP NXP NXP NXP NXP
package instruction PLASTIC, SC-46, 3 PIN - SMALL OUTLINE, R-PSSO-G2 PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3 3 3 3 3
Reach Compliance Code compliant - unknown unknown unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N - N N N - -
Avalanche Energy Efficiency Rating (Eas) 500 mJ - 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN
Minimum drain-source breakdown voltage 25 V - 25 V 25 V 25 V 25 V 25 V
Maximum drain current (ID) 75 A - 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.0029 Ω - 0.0029 Ω 0.0029 Ω 0.0029 Ω 0.00245 Ω 0.00245 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 - R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 - e3 e3 e3 e3 e3
Number of components 1 - 1 1 1 1 1
Number of terminals 3 - 2 2 3 3 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C - - 175 °C 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 400 A - 400 A 400 A 400 A 400 A 400 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO - YES YES NO NO YES
Terminal surface TIN - TIN Tin (Sn) Tin (Sn) TIN TIN
Terminal form THROUGH-HOLE - GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 - -
Is it Rohs certified? - - - conform to conform to conform to conform to
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