MOSFET RAIL PWR-MOS
Parameter Name | Attribute value |
Brand Name | NXP Semiconductor |
Maker | NXP |
Parts packaging code | TO-220AB |
package instruction | PLASTIC, SC-46, 3 PIN |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 25 V |
Maximum drain current (Abs) (ID) | 75 A |
Maximum drain current (ID) | 75 A |
Maximum drain-source on-resistance | 0.0029 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 230 W |
Maximum pulsed drain current (IDM) | 400 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
PSMN002-25P,127 | PSMN002-25B118 | PSMN002-25B,118 | PSMN002-25B | PSMN002-25P | 934056778127 | 934056779118 | |
---|---|---|---|---|---|---|---|
Description | MOSFET RAIL PWR-MOS | MOSFET TAPE13 PWR-MOS | PSMN002-25B | 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | 75A, 25V, 0.00245ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power |
Configuration | SINGLE WITH BUILT-IN DIODE | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Maker | NXP | - | NXP | NXP | NXP | NXP | NXP |
package instruction | PLASTIC, SC-46, 3 PIN | - | SMALL OUTLINE, R-PSSO-G2 | PLASTIC, D2PAK-3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 3 | - | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | - | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Is Samacsys | N | - | N | N | N | - | - |
Avalanche Energy Efficiency Rating (Eas) | 500 mJ | - | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
Shell connection | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
Minimum drain-source breakdown voltage | 25 V | - | 25 V | 25 V | 25 V | 25 V | 25 V |
Maximum drain current (ID) | 75 A | - | 75 A | 75 A | 75 A | 75 A | 75 A |
Maximum drain-source on-resistance | 0.0029 Ω | - | 0.0029 Ω | 0.0029 Ω | 0.0029 Ω | 0.00245 Ω | 0.00245 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
JESD-609 code | e3 | - | e3 | e3 | e3 | e3 | e3 |
Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | - | 2 | 2 | 3 | 3 | 2 |
Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C | - | 175 °C | - | - | 175 °C | 175 °C |
Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | - | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 400 A | - | 400 A | 400 A | 400 A | 400 A | 400 A |
Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | - | YES | YES | NO | NO | YES |
Terminal surface | TIN | - | TIN | Tin (Sn) | Tin (Sn) | TIN | TIN |
Terminal form | THROUGH-HOLE | - | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
Terminal location | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | - | 1 | 1 | 1 | - | - |
Is it Rohs certified? | - | - | - | conform to | conform to | conform to | conform to |