PSMN002-25B118 datasheet, PDF - EEWORLD Datasheet

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PSMN002-25B118: DescriptionMOSFET TAPE13 PWR-MOS; Categorysemiconductor Discrete semiconductor; File Size288KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PSMN002-25B118 Overview

MOSFET TAPE13 PWR-MOS

PSMN002-25B118 Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	NXP
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	75 A
Rds On - Drain-Source Resistance	2.6 mOhms
Vgs - Gate-Source Voltage	15 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Fall Time	285 ns
Height	4.5 mm
Length	10.3 mm
Pd - Power Dissipation	230 W
Rise Time	175 ns
Factory Pack Quantity	800
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	355 ns
Typical Turn-On Delay Time	53 ns
Width	9.4 mm
Unit Weight	0.079014 oz

PSMN002-25B118 Related Products

	PSMN002-25B118	PSMN002-25P,127	PSMN002-25B,118	PSMN002-25B	PSMN002-25P	934056778127	934056779118
Description	MOSFET TAPE13 PWR-MOS	MOSFET RAIL PWR-MOS	PSMN002-25B	75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3	75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN	75A, 25V, 0.00245ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN	TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
Configuration	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maker	-	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	-	PLASTIC, SC-46, 3 PIN	SMALL OUTLINE, R-PSSO-G2	PLASTIC, D2PAK-3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	-	3	3	3	3	3	3
Reach Compliance Code	-	compliant	unknown	unknown	unknown	unknown	unknown
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	-	N	N	N	N	-	-
Avalanche Energy Efficiency Rating (Eas)	-	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Minimum drain-source breakdown voltage	-	25 V	25 V	25 V	25 V	25 V	25 V
Maximum drain current (ID)	-	75 A	75 A	75 A	75 A	75 A	75 A
Maximum drain-source on-resistance	-	0.0029 Ω	0.0029 Ω	0.0029 Ω	0.0029 Ω	0.00245 Ω	0.00245 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	-	e3	e3	e3	e3	e3	e3
Number of components	-	1	1	1	1	1	1
Number of terminals	-	3	2	2	3	3	2
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	-	-	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	400 A	400 A	400 A	400 A	400 A	400 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	YES	YES	NO	NO	YES
Terminal surface	-	TIN	TIN	Tin (Sn)	Tin (Sn)	TIN	TIN
Terminal form	-	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	-	1	1	1	1	-	-
Is it Rohs certified?	-	-	-	conform to	conform to	conform to	conform to

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