IRHMB54Z60 datasheet, PDF - EEWORLD Datasheet

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IRHMB54Z60: DescriptionRADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA); CategoryDiscrete semiconductor The transistor; File Size170KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHMB54Z60 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

IRHMB54Z60 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Parts packaging code	TO-254AA
package instruction	IN-LINE, R-XSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1250 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	45 A
Maximum drain-source on-resistance	0.0045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD-96973

RADIATION HARDENED

IRHMB57Z60

POWER MOSFET

30V, N-CHANNEL

THRU-HOLE

(Tabless - Low-Ohmic TO-254AA)

TECHNOLOGY

Product Summary

Part Number Radiation Level

IRHMB57Z60 100K Rads (Si)

IRHMB53Z60 300K Rads (Si)

IRHMB54Z60 600K Rads (Si)

IRHMB58Z60 1000K Rads (Si)

DS(on)

0.0045Ω 45A*

Tabless

Low-Ohmic

TO-254AA

International Rectifier’s R5

technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low

RDS(on)

and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Low R

DS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by package

For footnotes refer to the last page

45*

180

208

1.67

±20

1250

20.8

1.08

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 (0.063 in. /1.6 mm from case for 10s)

8.0 (Typical)

www.irf.com

03/08/05

IRHMB54Z60 Related Products

	IRHMB54Z60	IRHMB53Z60	IRHMB57Z60	IRHMB58Z60
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Parts packaging code	TO-254AA	TO-254AA	TO-254AA	TO-254AA
package instruction	IN-LINE, R-XSIP-T3	IN-LINE, R-XSIP-T3	IN-LINE, R-XSIP-T3	IN-LINE, R-XSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	unknow	compli	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1250 mJ	1250 mJ	1250 mJ	1250 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	45 A	45 A	45 A	45 A
Maximum drain-source on-resistance	0.0045 Ω	0.0045 Ω	0.0045 Ω	0.0045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XSIP-T3	R-XSIP-T3	R-XSIP-T3	R-XSIP-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A	180 A	180 A	180 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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