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IRHMB57Z60

Description
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
CategoryDiscrete semiconductor    The transistor   
File Size170KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHMB57Z60 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

IRHMB57Z60 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Parts packaging codeTO-254AA
package instructionIN-LINE, R-XSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1250 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.0045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD-96973
RADIATION HARDENED
IRHMB57Z60
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE
(Tabless - Low-Ohmic TO-254AA)
5

TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMB57Z60 100K Rads (Si)
IRHMB53Z60 300K Rads (Si)
IRHMB54Z60 600K Rads (Si)
IRHMB58Z60 1000K Rads (Si)
R
DS(on)
I
D
0.0045Ω 45A*
0.0045Ω 45A*
0.0045Ω 45A*
0.0045Ω 45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
±20
1250
45
20.8
1.08
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
www.irf.com
1
03/08/05

IRHMB57Z60 Related Products

IRHMB57Z60 IRHMB53Z60 IRHMB54Z60 IRHMB58Z60
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Parts packaging code TO-254AA TO-254AA TO-254AA TO-254AA
package instruction IN-LINE, R-XSIP-T3 IN-LINE, R-XSIP-T3 IN-LINE, R-XSIP-T3 IN-LINE, R-XSIP-T3
Contacts 3 3 3 3
Reach Compliance Code unknow compli unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 1250 mJ 1250 mJ 1250 mJ 1250 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 45 A 45 A 45 A 45 A
Maximum drain-source on-resistance 0.0045 Ω 0.0045 Ω 0.0045 Ω 0.0045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XSIP-T3 R-XSIP-T3 R-XSIP-T3 R-XSIP-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 180 A 180 A 180 A 180 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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