EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

2SA1162-YT5LFT

Description
Bipolar Transistors - BJT x34 Small Signal Transistor
Categorysemiconductor    Discrete semiconductor   
File Size169KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1162-YT5LFT Online Shopping

Suppliers Part Number Price MOQ In stock  
2SA1162-YT5LFT - - View Buy Now

2SA1162-YT5LFT Overview

Bipolar Transistors - BJT x34 Small Signal Transistor

2SA1162-YT5LFT Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseS-Mini-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO- 50 V
Emitter- Base Voltage VEBO- 5 V
Maximum DC Collector Current0.15 A
Gain Bandwidth Product fT80 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
DC Current Gain hFE Max400
Height1.1 mm
Length2.9 mm
PackagingCut Tape
PackagingReel
Width1.5 mm
Continuous Collector Current- 150 mA
DC Collector/Base Gain hfe Min120
Pd - Power Dissipation150 mW
Factory Pack Quantity3000
Unit Weight0.000988 oz

2SA1162-YT5LFT Related Products

2SA1162-YT5LFT 2SA1162-GR(T5L,F,T 2SA1162GRT5LFT
Description Bipolar Transistors - BJT x34 Small Signal Transistor Bipolar Transistors - BJT Pb-F S-MINI PLN(LF),ACTIVE, Bipolar Transistors - BJT Transistor
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Transistor Polarity PNP PNP PNP
Configuration Single Single Single
Collector- Emitter Voltage VCEO Max 50 V 50 V 50 V
Collector- Base Voltage VCBO - 50 V - 50 V - 50 V
Emitter- Base Voltage VEBO - 5 V - 5 V - 5 V
Maximum DC Collector Current 0.15 A 0.15 A 0.15 A
Gain Bandwidth Product fT 80 MHz 80 MHz 80 MHz
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 125 C + 125 C + 125 C
DC Current Gain hFE Max 400 400 400
Height 1.1 mm 1.1 mm 1.1 mm
Length 2.9 mm 2.9 mm 2.9 mm
Width 1.5 mm 1.5 mm 1.5 mm
Continuous Collector Current - 150 mA - 150 mA - 150 mA
DC Collector/Base Gain hfe Min 120 200 200
Pd - Power Dissipation 150 mW 150 mW 150 mW
Factory Pack Quantity 3000 10000 3000
Unit Weight 0.000988 oz 0.000988 oz 0.000988 oz
Package / Case S-Mini-3 - S-Mini-3
Packaging Reel - Reel
The difference between single-port RAM, pseudo-dual-port RAM, dual-port RAM and FIFO
[size=4][color=#252525]The commonly used data cache IPs are FIFO and RAM, among which RAM is divided into single-port RAM, pseudo-dual-port RAM, and dual-port RAM. [/color] [color=#252525] The differe...
Aguilera DSP and ARM Processors
Read the good book "Electronic Engineer Self-study Handbook" - Suggestions
[i=s] This post was last edited by Lazy Cat Love Flying on 2021-8-4 11:49[/i]I have basically finished reading this book. For beginners, it is enough. If you don’t like reading books, you can scan the...
懒猫爱飞 Analog electronics
Why do DSPs with large on-chip RAM have high efficiency?
[size=4][color=#000000][backcolor=white] At present, the on-chip RAM of DSP is getting bigger and bigger. To design an efficient DSP system, you should choose a DSP with a larger on-chip RAM. [/backco...
Jacktang DSP and ARM Processors
How is the buffering function of 74HC04 manifested? What is the difference between buffering and latching?
How is the buffering function of 74HC04 manifested? What is the difference between buffering and latching?...
深圳小花 MCU
The most popular international and regional distributors: a competition of scale, specialization and characteristics
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 20:00[/i]...
rain Mobile and portable
From base stations to terminals, end-to-end 5G RF front-end solutions
The arrival of 5G will have a huge impact on the RF front-end. At the 5G China 2019 conference, Lawrence Tao, senior marketing manager of Qorvo Asia Pacific, shared a speech titled "From base stations...
btty038 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号