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2SA1162GRT5LFT |
2SA1162-YT5LFT |
2SA1162-GR(T5L,F,T |
Description |
Bipolar Transistors - BJT Transistor |
Bipolar Transistors - BJT x34 Small Signal Transistor |
Bipolar Transistors - BJT Pb-F S-MINI PLN(LF),ACTIVE, |
Product Attribute |
Attribute Value |
Attribute Value |
Attribute Value |
Manufacturer |
Toshiba Semiconductor |
Toshiba Semiconductor |
Toshiba Semiconductor |
Product Category |
Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
RoHS |
Details |
Details |
Details |
Mounting Style |
SMD/SMT |
SMD/SMT |
SMD/SMT |
Transistor Polarity |
PNP |
PNP |
PNP |
Configuration |
Single |
Single |
Single |
Collector- Emitter Voltage VCEO Max |
50 V |
50 V |
50 V |
Collector- Base Voltage VCBO |
- 50 V |
- 50 V |
- 50 V |
Emitter- Base Voltage VEBO |
- 5 V |
- 5 V |
- 5 V |
Maximum DC Collector Current |
0.15 A |
0.15 A |
0.15 A |
Gain Bandwidth Product fT |
80 MHz |
80 MHz |
80 MHz |
Minimum Operating Temperature |
- 55 C |
- 55 C |
- 55 C |
Maximum Operating Temperature |
+ 125 C |
+ 125 C |
+ 125 C |
DC Current Gain hFE Max |
400 |
400 |
400 |
Height |
1.1 mm |
1.1 mm |
1.1 mm |
Length |
2.9 mm |
2.9 mm |
2.9 mm |
Width |
1.5 mm |
1.5 mm |
1.5 mm |
Continuous Collector Current |
- 150 mA |
- 150 mA |
- 150 mA |
DC Collector/Base Gain hfe Min |
200 |
120 |
200 |
Pd - Power Dissipation |
150 mW |
150 mW |
150 mW |
Factory Pack Quantity |
3000 |
3000 |
10000 |
Unit Weight |
0.000988 oz |
0.000988 oz |
0.000988 oz |
Package / Case |
S-Mini-3 |
S-Mini-3 |
- |
Packaging |
Reel |
Reel |
- |