AT25XE011-XMHN-B datasheet, PDF

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AT25XE011-XMHN-B: DescriptionFlash Memory X-Energy, 8-TSSOP, IND TEMP, 1.65V, TUBE; Categorystorage; File Size2MB，41 Pages; ManufacturerAdesto Technologies

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AT25XE011-XMHN-B Overview

Flash Memory X-Energy, 8-TSSOP, IND TEMP, 1.65V, TUBE

AT25XE011-XMHN-B Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Adesto Technologies
Product Category	Flash Memory
RoHS	Details
Packaging	Tube
Moisture Sensitive	Yes
Factory Pack Quantity	100

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AT25XE011

1-Mbit, 1.65V Minimum

SPI Serial Flash Memory with Dual-Read Support

Features



Single 1.65V - 3.6V Supply



Serial Peripheral Interface (SPI) Compatible

Supports SPI Modes 0 and 3

Supports Dual Output Read



104MHz Maximum Operating Frequency



Clock-to-Output (t

) of 6 ns



Flexible, Optimized Erase Architecture for Code + Data Storage Applications



Small (256-Byte) Page Erase



Uniform 4-Kbyte Block Erase



Uniform 32-Kbyte Block Erase



Full Chip Erase



Hardware Controlled Locking of Protected Sectors via WP Pin



128-byte, One-Time Programmable (OTP) Security Register

64 bytes factory programmed with a unique identifier

64 bytes user programmable



Flexible Programming



Byte/Page Program (1 to 256 Bytes)



Fast Program and Erase Times



2ms Typical Page Program (256 Bytes) Time



50ms Typical 4-Kbyte Block Erase Time



400ms Typical 32-Kbyte Block Erase Time



Automatic Checking and Reporting of Erase/Program Failures



Software Controlled Reset



JEDEC Standard Manufacturer and Device ID Read Methodology



Low Power Dissipation

200nA Ultra Deep Power Down current (Typical)

4.5µA Deep Power-Down Current (Typical)

25uA Standby current (Typical)

3.5mA Active Read Current (Typical)



Endurance: 100,000 Program/Erase Cycles



Data Retention: 20 Years



Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)



Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options



8-lead SOIC (150-mil)

8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)

8-lead TSSOP Package

8-ball WLCSP

(1)

Note: 1. Contact factory for availability.

DS-25XE011–059G–6/2017

Description

The Adesto® AT25XE011 is a highly optimized ultra-low energy serial interface Flash memory device designed for use in a wide

variety of high-volume low energy consumer and industrial applications. The AT25XE011 device has been optimized by design to

meet the needs of today's connected applications in the Internet of Things market space.

The granular Page Erase and Block Erase architecture allows the memory space to be used much more efficiently supporting

data storage and over the air updates. Key program code subroutines and data storage segments need to reside by themselves

in their own separate erase regions, and with a granular architecture the wasted and unused memory space that occurs with large

sectored and large block erase flash memory devices can be greatly reduced.

The resulting improvement to software efficiency contributes to reduced CPU / MCU overheads that translate to further reduce

the system energy usage levels. The device also contains a specialized OTP (One-Time Programmable) Security Register that

can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key

storage, etc. Specifically designed for use in many different systems, the AT25XE011 supports read, program, and erase

operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.

Pin Descriptions and Pinouts

Pin Descriptions

Name and Function

CHIP SELECT:

Asserting the CS pin selects the device. When the CS pin is deasserted, the

device will be deselected and normally be placed in standby mode (not Deep Power-Down mode),

and the SO pin will be in a high-impedance state. When the device is deselected, data will not be

accepted on the SI pin.

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition

is required to end an operation. When ending an internally self-timed operation such as a program

or erase cycle, the device will not enter the standby mode until the completion of the operation.

SERIAL CLOCK:

This pin is used to provide a clock to the device and is used to control the flow

of data to and from the device. Command, address, and input data present on the SI pin is always

latched in on the rising edge of SCK, while output data on the SO pin is always clocked out on the

falling edge of SCK.

SERIAL INPUT:

The SI pin is used to shift data into the device. The SI pin is used for all data input

including command and address sequences. Data on the SI pin is always latched in on the rising

edge of SCK.

Asserted

State

Type

Table 2-1.

Symbol

Low

Input

SCK

Input

SI (I/O

)

With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O

) in conjunction

with other pins to allow two bits of data on (I/O

1-0

) to be clocked out on every falling edge of SCK.

To maintain consistency with the SPI nomenclature, the SI (I/O

) pin will be referenced as the SI

pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O

Data present on the SI pin will be ignored whenever the device is deselected (CS is deasserted).

SERIAL OUTPUT:

The SO pin is used to shift data out from the device. Data on the SO pin is

always clocked out on the falling edge of SCK.

With the Dual-Output Read commands, the SO Pin remains an output pin (I/O

) in conjunction

with other pins to allow two bits of data on (I/O

1-0

) to be clocked out on every falling edge of SCK.

To maintain consistency with the SPI nomenclature, the SO (I/O

) pin will be referenced as the SO

pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O

The SO pin will be in a high-impedance state whenever the device is deselected (CS is

deasserted).

Input/

Output

SO (I/O

)

Input/

Output

AT25XE011

DS-25XE011–059G–6/2017

AT25XE011-XMHN-B Related Products

	AT25XE011-XMHN-B	AT25XE011-MAHN-T	AT25XE011-SSHN-T	AT25XE011-SSHN-B	AT25XE011-XMHN-T	AT25XE011-UUN-T
Description	Flash Memory X-Energy, 8-TSSOP, IND TEMP, 1.65V, TUBE	Flash Memory X-Energy, 8-UDFN (2x3x0.6), IND TEMP, 1.65V, T&R	NOR Flash X-Energy, 8-SOIC-N, IND TEMP, 1.65V, T&R	NOR Flash X-Energy, 8-SOIC-N, IND TEMP, 1.65V, TUBE	NOR Flash X-Energy, 8 ball WLCSP, HIGH TEMP, 1.65V-4.4V, T&R	NOR Flash 1M 1.65V-3.6V SPI 104MHz IND TEMP
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies
Product Category	Flash Memory	Flash Memory	NOR Flash	NOR Flash	NOR Flash	NOR Flash
Factory Pack Quantity	100	5000	4000	98	4000	5000
RoHS	Details	Details	Details	Details	Details	-
Packaging	Tube	Reel	Reel	Tube	Reel	Reel

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