AT25XE011-UUN-T datasheet, PDF

Datasheet> All Categories > storage> AT25XE011-UUN-T

AT25XE011-UUN-T: DescriptionNOR Flash 1M 1.65V-3.6V SPI 104MHz IND TEMP; Categorystorage; File Size2MB，41 Pages; ManufacturerAdesto Technologies

Download Datasheet Parametric Compare View All

AT25XE011-UUN-T Overview

NOR Flash 1M 1.65V-3.6V SPI 104MHz IND TEMP

AT25XE011-UUN-T Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Adesto Technologies
Product Category	NOR Flash
Packaging	Reel
Factory Pack Quantity	5000

Preview

Download Datasheet

View All

AT25XE011

1-Mbit, 1.65V Minimum

SPI Serial Flash Memory with Dual-Read Support

Features



Single 1.65V - 3.6V Supply



Serial Peripheral Interface (SPI) Compatible

Supports SPI Modes 0 and 3

Supports Dual Output Read



104MHz Maximum Operating Frequency



Clock-to-Output (t

) of 6 ns



Flexible, Optimized Erase Architecture for Code + Data Storage Applications



Small (256-Byte) Page Erase



Uniform 4-Kbyte Block Erase



Uniform 32-Kbyte Block Erase



Full Chip Erase



Hardware Controlled Locking of Protected Sectors via WP Pin



128-byte, One-Time Programmable (OTP) Security Register

64 bytes factory programmed with a unique identifier

64 bytes user programmable



Flexible Programming



Byte/Page Program (1 to 256 Bytes)



Fast Program and Erase Times



2ms Typical Page Program (256 Bytes) Time



50ms Typical 4-Kbyte Block Erase Time



400ms Typical 32-Kbyte Block Erase Time



Automatic Checking and Reporting of Erase/Program Failures



Software Controlled Reset



JEDEC Standard Manufacturer and Device ID Read Methodology



Low Power Dissipation

200nA Ultra Deep Power Down current (Typical)

4.5µA Deep Power-Down Current (Typical)

25uA Standby current (Typical)

3.5mA Active Read Current (Typical)



Endurance: 100,000 Program/Erase Cycles



Data Retention: 20 Years



Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)



Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options



8-lead SOIC (150-mil)

8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)

8-lead TSSOP Package

8-ball WLCSP

(1)

Note: 1. Contact factory for availability.

DS-25XE011–059G–6/2017

Description

The Adesto® AT25XE011 is a highly optimized ultra-low energy serial interface Flash memory device designed for use in a wide

variety of high-volume low energy consumer and industrial applications. The AT25XE011 device has been optimized by design to

meet the needs of today's connected applications in the Internet of Things market space.

The granular Page Erase and Block Erase architecture allows the memory space to be used much more efficiently supporting

data storage and over the air updates. Key program code subroutines and data storage segments need to reside by themselves

in their own separate erase regions, and with a granular architecture the wasted and unused memory space that occurs with large

sectored and large block erase flash memory devices can be greatly reduced.

The resulting improvement to software efficiency contributes to reduced CPU / MCU overheads that translate to further reduce

the system energy usage levels. The device also contains a specialized OTP (One-Time Programmable) Security Register that

can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key

storage, etc. Specifically designed for use in many different systems, the AT25XE011 supports read, program, and erase

operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.

Pin Descriptions and Pinouts

Pin Descriptions

Name and Function

CHIP SELECT:

Asserting the CS pin selects the device. When the CS pin is deasserted, the

device will be deselected and normally be placed in standby mode (not Deep Power-Down mode),

and the SO pin will be in a high-impedance state. When the device is deselected, data will not be

accepted on the SI pin.

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition

is required to end an operation. When ending an internally self-timed operation such as a program

or erase cycle, the device will not enter the standby mode until the completion of the operation.

SERIAL CLOCK:

This pin is used to provide a clock to the device and is used to control the flow

of data to and from the device. Command, address, and input data present on the SI pin is always

latched in on the rising edge of SCK, while output data on the SO pin is always clocked out on the

falling edge of SCK.

SERIAL INPUT:

The SI pin is used to shift data into the device. The SI pin is used for all data input

including command and address sequences. Data on the SI pin is always latched in on the rising

edge of SCK.

Asserted

State

Type

Table 2-1.

Symbol

Low

Input

SCK

Input

SI (I/O

)

With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O

) in conjunction

with other pins to allow two bits of data on (I/O

1-0

) to be clocked out on every falling edge of SCK.

To maintain consistency with the SPI nomenclature, the SI (I/O

) pin will be referenced as the SI

pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O

Data present on the SI pin will be ignored whenever the device is deselected (CS is deasserted).

SERIAL OUTPUT:

The SO pin is used to shift data out from the device. Data on the SO pin is

always clocked out on the falling edge of SCK.

With the Dual-Output Read commands, the SO Pin remains an output pin (I/O

) in conjunction

with other pins to allow two bits of data on (I/O

1-0

) to be clocked out on every falling edge of SCK.

To maintain consistency with the SPI nomenclature, the SO (I/O

) pin will be referenced as the SO

pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O

The SO pin will be in a high-impedance state whenever the device is deselected (CS is

deasserted).

Input/

Output

SO (I/O

)

Input/

Output

AT25XE011

DS-25XE011–059G–6/2017

AT25XE011-UUN-T Related Products

	AT25XE011-UUN-T	AT25XE011-MAHN-T	AT25XE011-XMHN-B	AT25XE011-SSHN-T	AT25XE011-SSHN-B	AT25XE011-XMHN-T
Description	NOR Flash 1M 1.65V-3.6V SPI 104MHz IND TEMP	Flash Memory X-Energy, 8-UDFN (2x3x0.6), IND TEMP, 1.65V, T&R	Flash Memory X-Energy, 8-TSSOP, IND TEMP, 1.65V, TUBE	NOR Flash X-Energy, 8-SOIC-N, IND TEMP, 1.65V, T&R	NOR Flash X-Energy, 8-SOIC-N, IND TEMP, 1.65V, TUBE	NOR Flash X-Energy, 8 ball WLCSP, HIGH TEMP, 1.65V-4.4V, T&R
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies
Product Category	NOR Flash	Flash Memory	Flash Memory	NOR Flash	NOR Flash	NOR Flash
Factory Pack Quantity	5000	5000	100	4000	98	4000
Packaging	Reel	Reel	Tube	Reel	Tube	Reel
RoHS	-	Details	Details	Details	Details	Details

Recommended Resources

How to ensure that the power supply works for a long time—ZDL oscilloscope recorder

Principle circuit of current switching class D amplifier

Stapler control circuit

555 music lantern controller circuit diagram

Fast charging circuit diagram using UC3906

M9082 (TV) infrared remote control transmitter microprocessor

Wearable ECG monitoring: [i=s] This post was last edited by Jiang Ziyatong on 2022-6-28 11:25[/i]In recent years, the development of personal smart ECG monitoring equipment has accelerated, and there are many types of wearabl...; 姜子牙疼 Medical Electronics

General test methods for wireless communication equipment: With the rapid development of wireless communication in my country, the technical requirements for wireless communication equipment are getting higher and higher. How to determine its performance indi...; Jacktang Wireless Connectivity

I started to enter the Huada MCU again: I just got familiar with Hetai MCU some time ago. This MCU cannot be simulated online and needs a special simulation chip. It can only be used to make small household appliances. Under my suggestion, ...; 眼大5子 Domestic Chip Exchange

Developing automotive gateways for next-generation vehicles: Automotive architectures are evolving rapidly, with vehicles moving from semi-autonomous driving to eventually fully autonomous driving. Automakers are also adding features such as smart access, vehic...; alan000345 TI Technology Forum

Research on Airport Runway Identification Algorithm and Implementation: ...; 至芯科技FPGA大牛 FPGA/CPLD

Regarding the clamping problem, discuss: The figure below is a schematic diagram of the clamping circuit. L is the inductor. G is used to control the coil power-on time, and a roughly expected current value is expected. I would like to ask t...; 灞波儿奔 Power technology

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components