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AOI452A

Description
Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size202KB,7 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet Parametric View All

AOI452A Overview

Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3

AOI452A Parametric

Parameter NameAttribute value
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)55 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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