IRF3710ZL datasheet, PDF - EEWORLD Datasheet

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IRF3710ZL: DescriptionAUTOMOTIVE MOSFET; CategoryDiscrete semiconductor The transistor; File Size381KB，12 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF3710ZL Overview

AUTOMOTIVE MOSFET

IRF3710ZL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	59 A
Maximum drain current (ID)	59 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 95466A

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

HEXFET

Power MOSFET

IRF3710ZPbF

IRF3710ZSPbF

IRF3710ZLPbF

DSS

= 100V

DS(on)

= 18mΩ

= 59A

Description

This HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

TO-220AB

IRF3710ZPbF

Pak

TO-262

IRF3710ZSPbF IRF3710ZLPbF

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

(tested)

STG

Continuous Drain Current, V

@ 10V (Silicon Limited)

Continuous Drain Current, V

@ 10V (See Fig. 9)

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Max.

240

160

1.1

± 20

170

200

See Fig.12a,12b,15,16

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Units

W/°C

°C

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Typ.

–––

0.50

–––

Max.

0.92

–––

Units

°C/W

HEXFET

is a registered trademark of International Rectifier.

www.irf.com

07/23/10

IRF3710ZL Related Products

	IRF3710ZL	IRF3710Z	IRF3710ZS	IRF3710ZSTRRPBF
Description	AUTOMOTIVE MOSFET	AUTOMOTIVE MOSFET	AUTOMOTIVE MOSFET	mosfet N-CH 100v 59a d2pak
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA	TO-220AB	D2PAK	D2PAK
package instruction	IN-LINE, R-PSIP-T3	TO-220AB, 3 PIN	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, D2PAK-3
Contacts	3	3	3	3
Reach Compliance Code	compli	unknow	compli	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	200 mJ	170 mJ	200 mJ	200 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	59 A	59 A	59 A	59 A
Maximum drain current (ID)	59 A	59 A	59 A	59 A
Maximum drain-source on-resistance	0.018 Ω	0.018 Ω	0.018 Ω	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-220AB	TO-263AB	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e0	e3
Number of components	1	1	1	1
Number of terminals	3	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	225	225	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	160 W	160 W	160 W	160 W
Maximum pulsed drain current (IDM)	240 A	240 A	240 A	240 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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