mosfet N-CH 100v 59a d2pak
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | D2PAK |
| package instruction | LEAD FREE, PLASTIC, D2PAK-3 |
| Contacts | 3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Avalanche Energy Efficiency Rating (Eas) | 200 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 59 A |
| Maximum drain current (ID) | 59 A |
| Maximum drain-source on-resistance | 0.018 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 160 W |
| Maximum pulsed drain current (IDM) | 240 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IRF3710ZSTRRPBF | IRF3710Z | IRF3710ZL | IRF3710ZS | |
|---|---|---|---|---|
| Description | mosfet N-CH 100v 59a d2pak | AUTOMOTIVE MOSFET | AUTOMOTIVE MOSFET | AUTOMOTIVE MOSFET |
| Is it Rohs certified? | conform to | incompatible | incompatible | incompatible |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| Parts packaging code | D2PAK | TO-220AB | TO-262AA | D2PAK |
| package instruction | LEAD FREE, PLASTIC, D2PAK-3 | TO-220AB, 3 PIN | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | not_compliant | unknow | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | HIGH RELIABILITY | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Avalanche Energy Efficiency Rating (Eas) | 200 mJ | 170 mJ | 200 mJ | 200 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (Abs) (ID) | 59 A | 59 A | 59 A | 59 A |
| Maximum drain current (ID) | 59 A | 59 A | 59 A | 59 A |
| Maximum drain-source on-resistance | 0.018 Ω | 0.018 Ω | 0.018 Ω | 0.018 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-220AB | TO-262AA | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e3 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 225 | NOT SPECIFIED | 225 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 160 W | 160 W | 160 W | 160 W |
| Maximum pulsed drain current (IDM) | 240 A | 240 A | 240 A | 240 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | 30 | NOT SPECIFIED | 30 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
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