K4T56083QF-ZCD5 datasheet, PDF

Datasheet> All Categories > storage> storage> K4T56083QF-ZCD5

K4T56083QF-ZCD5: Description256Mb F-die DDR2 SDRAM; Categorystorage storage; File Size479KB，27 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

Download Datasheet Parametric Compare View All

K4T56083QF-ZCD5 Overview

256Mb F-die DDR2 SDRAM

K4T56083QF-ZCD5 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	267 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	13 mm
memory density	268435456 bi
Memory IC Type	DDR DRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.008 A
Maximum slew rate	0.255 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

Preview

Download Datasheet

View All

256Mb F-die DDR2 SDRAM

DDR2 SDRAM

256Mb F-die DDR2 SDRAM Specification

Version 1.5

February 2005

Page 1 of 27

Rev. 1.5 Feb. 2005

K4T56083QF-ZCD5 Related Products

	K4T56083QF-ZCD5	K4T56043QF-ZCD5	K4T56083QF	K4T56083QF-GCD5	K4T56083QF-GCE6	K4T56043QF	K4T56083QF-ZCE6	K4T56043QF-GCD5
Description	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM
Is it lead-free?	Lead free	-	-	Contains lead	Contains lead	-	Lead free	Contains lead
Is it Rohs certified?	conform to	conform to	-	incompatible	incompatible	-	conform to	incompatible
Maker	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	-	BGA	BGA	-	BGA	BGA
package instruction	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	-	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	-	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32
Contacts	60	60	-	60	60	-	60	60
Reach Compliance Code	unknow	unknow	-	unknow	unknow	-	compli	unknow
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.5 ns	0.5 ns	-	0.5 ns	0.45 ns	-	0.45 ns	0.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	267 MHz	267 MHz	-	267 MHz	333 MHz	-	333 MHz	267 MHz
I/O type	COMMON	COMMON	-	COMMON	COMMON	-	COMMON	COMMON
interleaved burst length	4,8	4,8	-	4,8	4,8	-	4,8	4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60
JESD-609 code	e1	e1	-	e0	e0	-	-	e0
length	13 mm	13 mm	-	13 mm	13 mm	-	13 mm	13 mm
memory density	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi
Memory IC Type	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM
memory width	8	4	-	8	8	-	8	4
Number of functions	1	1	-	1	1	-	1	1
Number of ports	1	1	-	1	1	-	1	1
Number of terminals	60	60	-	60	60	-	60	60
word count	33554432 words	67108864 words	-	33554432 words	33554432 words	-	33554432 words	67108864 words
character code	32000000	64000000	-	32000000	32000000	-	32000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	-	95 °C	95 °C	-	95 °C	95 °C
organize	32MX8	64MX4	-	32MX8	32MX8	-	32MX8	64MX4
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	-	TFBGA	TFBGA	-	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,9X11,32	BGA60,9X11,32	-	BGA60,9X11,32	BGA60,9X11,32	-	BGA60,9X11,32	BGA60,9X11,32
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	-	240	NOT SPECIFIED	-	260	NOT SPECIFIED
power supply	1.8 V	1.8 V	-	1.8 V	1.8 V	-	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	8192	8192	-	8192	8192	-	8192	8192
Maximum seat height	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm
self refresh	YES	YES	-	YES	YES	-	YES	YES
Continuous burst length	4,8	4,8	-	4,8	4,8	-	4,8	4,8
Maximum standby current	0.008 A	0.008 A	-	0.008 A	0.008 A	-	0.008 A	0.008 A
Maximum slew rate	0.255 mA	0.25 mA	-	0.255 mA	0.265 mA	-	0.265 mA	0.25 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	-	1.9 V	1.9 V	-	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	-	1.7 V	1.7 V	-	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	-	1.8 V	1.8 V	-	1.8 V	1.8 V
surface mount	YES	YES	-	YES	YES	-	YES	YES
technology	CMOS	CMOS	-	CMOS	CMOS	-	CMOS	CMOS
Temperature level	OTHER	OTHER	-	OTHER	OTHER	-	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	-	BALL	BALL	-	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	11 mm	11 mm	-	11 mm	11 mm	-	11 mm	11 mm

Recommended Resources

Image sensor interface circuit diagram based on video surveillance system

Dual power supply DC stabilized power supply circuit

Multiple groups of high-power colored light chain circuits that flash in turn (Part 2)

Homemade high-performance four-dimensional surround sound amplifier 03

BL0509 type application connection circuit

Find a domestic single-chip microcomputer: [i=s] This post was last edited by feifeizhuer on 2019-4-10 17:29 [/i] The package is TSSOP16, 5 pins for VDD, 6 pins for ground, 15 and 16 pins should have comparator function; it should be 8-bit. I ...; feifeizhuer Domestic Chip Exchange

FreeRTOS v10.1.0 source code Chinese annotated version: As the title says, I would like to share my own Chinese comments on the FreeRTOS v10.1.0 source code to help beginners get started. The link is as follows: [url]https://github.com/xupenghu/LearningFre...; arsenal_ozil Real-time operating system RTOS

ESP8266 SDK Documentation Programming Manual: ESP8266 SDK Documentation and Programming Manual...; 普拉世科技 RF/Wirelessly

【Automobile Engine Real-time Vibration Tracker】#1 Project Software Development Environment and Hardware Analysis: [i=s]This post was last edited by Beifang on 2021-6-23 15:43[/i]Project software development environment and hardware analysis 1. We would like to thank ON Semiconductor and Avnet IoT Innovation Desig...; 北方 onsemi and Avnet IoT Innovation Design Competition

Award-winning live broadcast | MPS inductor solutions help better switching power supply design: Sign up for live broadcastLive broadcast time: December 3, 2020 (Thursday) 10:00-11:30 am Live Topic: MPS inductor solutions help better switching power supply design Live content:Switching power supp...; dancerzj Power technology

Concerns about RFID: Compared with the application of RFID in the United States, and the relevant legislative procedures have been initiated, our greater concern is that China's RFID application may have lagged far behind...; tmily RF/Wirelessly

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components