K4T56083QF-ZCE6 datasheet, PDF

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K4T56083QF-ZCE6: Description256Mb F-die DDR2 SDRAM; Categorystorage storage; File Size479KB，27 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4T56083QF-ZCE6 Overview

256Mb F-die DDR2 SDRAM

K4T56083QF-ZCE6 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	compli
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
length	13 mm
memory density	268435456 bi
Memory IC Type	DDR DRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.008 A
Maximum slew rate	0.265 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

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256Mb F-die DDR2 SDRAM

DDR2 SDRAM

256Mb F-die DDR2 SDRAM Specification

Version 1.5

February 2005

Page 1 of 27

Rev. 1.5 Feb. 2005

K4T56083QF-ZCE6 Related Products

	K4T56083QF-ZCE6	K4T56043QF-ZCD5	K4T56083QF	K4T56083QF-GCD5	K4T56083QF-GCE6	K4T56043QF	K4T56083QF-ZCD5	K4T56043QF-GCD5
Description	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM	256Mb F-die DDR2 SDRAM
Is it lead-free?	Lead free	-	-	Contains lead	Contains lead	-	Lead free	Contains lead
Is it Rohs certified?	conform to	conform to	-	incompatible	incompatible	-	conform to	incompatible
Maker	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	-	BGA	BGA	-	BGA	BGA
package instruction	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	-	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	-	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32
Contacts	60	60	-	60	60	-	60	60
Reach Compliance Code	compli	unknow	-	unknow	unknow	-	unknow	unknow
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.45 ns	0.5 ns	-	0.5 ns	0.45 ns	-	0.5 ns	0.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz	267 MHz	-	267 MHz	333 MHz	-	267 MHz	267 MHz
I/O type	COMMON	COMMON	-	COMMON	COMMON	-	COMMON	COMMON
interleaved burst length	4,8	4,8	-	4,8	4,8	-	4,8	4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60
length	13 mm	13 mm	-	13 mm	13 mm	-	13 mm	13 mm
memory density	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi
Memory IC Type	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM
memory width	8	4	-	8	8	-	8	4
Number of functions	1	1	-	1	1	-	1	1
Number of ports	1	1	-	1	1	-	1	1
Number of terminals	60	60	-	60	60	-	60	60
word count	33554432 words	67108864 words	-	33554432 words	33554432 words	-	33554432 words	67108864 words
character code	32000000	64000000	-	32000000	32000000	-	32000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	-	95 °C	95 °C	-	95 °C	95 °C
organize	32MX8	64MX4	-	32MX8	32MX8	-	32MX8	64MX4
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	-	TFBGA	TFBGA	-	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,9X11,32	BGA60,9X11,32	-	BGA60,9X11,32	BGA60,9X11,32	-	BGA60,9X11,32	BGA60,9X11,32
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	-	240	NOT SPECIFIED	-	260	NOT SPECIFIED
power supply	1.8 V	1.8 V	-	1.8 V	1.8 V	-	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	8192	8192	-	8192	8192	-	8192	8192
Maximum seat height	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm
self refresh	YES	YES	-	YES	YES	-	YES	YES
Continuous burst length	4,8	4,8	-	4,8	4,8	-	4,8	4,8
Maximum standby current	0.008 A	0.008 A	-	0.008 A	0.008 A	-	0.008 A	0.008 A
Maximum slew rate	0.265 mA	0.25 mA	-	0.255 mA	0.265 mA	-	0.255 mA	0.25 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	-	1.9 V	1.9 V	-	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	-	1.7 V	1.7 V	-	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	-	1.8 V	1.8 V	-	1.8 V	1.8 V
surface mount	YES	YES	-	YES	YES	-	YES	YES
technology	CMOS	CMOS	-	CMOS	CMOS	-	CMOS	CMOS
Temperature level	OTHER	OTHER	-	OTHER	OTHER	-	OTHER	OTHER
Terminal form	BALL	BALL	-	BALL	BALL	-	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	11 mm	11 mm	-	11 mm	11 mm	-	11 mm	11 mm
JESD-609 code	-	e1	-	e0	e0	-	e1	e0
Terminal surface	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn/Pb)

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