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K4T56043QF-GCD5

Description
256Mb F-die DDR2 SDRAM
Categorystorage    storage   
File Size479KB,27 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4T56043QF-GCD5 Overview

256Mb F-die DDR2 SDRAM

K4T56043QF-GCD5 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)267 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee0
length13 mm
memory density268435456 bi
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.008 A
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width11 mm
256Mb F-die DDR2 SDRAM
DDR2 SDRAM
256Mb F-die DDR2 SDRAM Specification
Version 1.5
February 2005
Page 1 of 27
Rev. 1.5 Feb. 2005

K4T56043QF-GCD5 Related Products

K4T56043QF-GCD5 K4T56043QF-ZCD5 K4T56083QF K4T56083QF-GCD5 K4T56083QF-GCE6 K4T56043QF K4T56083QF-ZCD5 K4T56083QF-ZCE6
Description 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM
Is it lead-free? Contains lead - - Contains lead Contains lead - Lead free Lead free
Is it Rohs certified? incompatible conform to - incompatible incompatible - conform to conform to
Maker SAMSUNG SAMSUNG - SAMSUNG SAMSUNG - SAMSUNG SAMSUNG
Parts packaging code BGA BGA - BGA BGA - BGA BGA
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 - TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 - TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32
Contacts 60 60 - 60 60 - 60 60
Reach Compliance Code unknow unknow - unknow unknow - unknow compli
ECCN code EAR99 EAR99 - EAR99 EAR99 - EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.5 ns 0.5 ns - 0.5 ns 0.45 ns - 0.5 ns 0.45 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 267 MHz 267 MHz - 267 MHz 333 MHz - 267 MHz 333 MHz
I/O type COMMON COMMON - COMMON COMMON - COMMON COMMON
interleaved burst length 4,8 4,8 - 4,8 4,8 - 4,8 4,8
JESD-30 code R-PBGA-B60 R-PBGA-B60 - R-PBGA-B60 R-PBGA-B60 - R-PBGA-B60 R-PBGA-B60
JESD-609 code e0 e1 - e0 e0 - e1 -
length 13 mm 13 mm - 13 mm 13 mm - 13 mm 13 mm
memory density 268435456 bi 268435456 bi - 268435456 bi 268435456 bi - 268435456 bi 268435456 bi
Memory IC Type DDR DRAM DDR DRAM - DDR DRAM DDR DRAM - DDR DRAM DDR DRAM
memory width 4 4 - 8 8 - 8 8
Number of functions 1 1 - 1 1 - 1 1
Number of ports 1 1 - 1 1 - 1 1
Number of terminals 60 60 - 60 60 - 60 60
word count 67108864 words 67108864 words - 33554432 words 33554432 words - 33554432 words 33554432 words
character code 64000000 64000000 - 32000000 32000000 - 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 95 °C 95 °C - 95 °C 95 °C - 95 °C 95 °C
organize 64MX4 64MX4 - 32MX8 32MX8 - 32MX8 32MX8
Output characteristics 3-STATE 3-STATE - 3-STATE 3-STATE - 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA - TFBGA TFBGA - TFBGA TFBGA
Encapsulate equivalent code BGA60,9X11,32 BGA60,9X11,32 - BGA60,9X11,32 BGA60,9X11,32 - BGA60,9X11,32 BGA60,9X11,32
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 - 240 NOT SPECIFIED - 260 260
power supply 1.8 V 1.8 V - 1.8 V 1.8 V - 1.8 V 1.8 V
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified
refresh cycle 8192 8192 - 8192 8192 - 8192 8192
Maximum seat height 1.2 mm 1.2 mm - 1.2 mm 1.2 mm - 1.2 mm 1.2 mm
self refresh YES YES - YES YES - YES YES
Continuous burst length 4,8 4,8 - 4,8 4,8 - 4,8 4,8
Maximum standby current 0.008 A 0.008 A - 0.008 A 0.008 A - 0.008 A 0.008 A
Maximum slew rate 0.25 mA 0.25 mA - 0.255 mA 0.265 mA - 0.255 mA 0.265 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V - 1.9 V 1.9 V - 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V - 1.7 V 1.7 V - 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V - 1.8 V 1.8 V - 1.8 V 1.8 V
surface mount YES YES - YES YES - YES YES
technology CMOS CMOS - CMOS CMOS - CMOS CMOS
Temperature level OTHER OTHER - OTHER OTHER - OTHER OTHER
Terminal surface Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Silver/Copper (Sn/Ag/Cu) -
Terminal form BALL BALL - BALL BALL - BALL BALL
Terminal pitch 0.8 mm 0.8 mm - 0.8 mm 0.8 mm - 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM - BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
width 11 mm 11 mm - 11 mm 11 mm - 11 mm 11 mm
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